Substrates with spacers, including substrates with solder resist spacers, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate comprises a first surface, a solder resist layer disposed over at least a portion of the first surface, and a plurality of electrical contacts at the first surface of the substrate. Electrical contacts of the plurality are configured to be coupled to corresponding electrical contacts at a surface of an electronic device. The substrate further includes a solder resist spacer disposed on the solder resist layer. The solder resist spacer can have a height corresponding to a thickness of the electronic device. The solder resist spacer can be configured as a dam to limit bleed out of underfill laterally away from the plurality of electrical contacts along the first surface and toward the solder resist spacer.

Provided is a multilayer substrate including laminated semiconductor substrates each having a penetrating hole (hereinafter referred to as through hole) having a plated film formed in the inner surface. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are selectively present at a position where the through holes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through holes are connected by the conductive particles, and the semiconductor substrates each having the through hole are bonded by an insulating adhesive.

A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.

A semiconductor device manufacturing method includes a first preparation step, a second preparation step, a mounting step, a third preparation step, a placing step and a curing step. In the first preparation step, a first leadframe including an island part is prepared. In the second preparation step, a semiconductor element including an element obverse surface, an element reverse surface, a first electrode and a second electrode is prepared. In the mounting step, the semiconductor element is mounted on the island part with a first conductive paste interposed between the element reverse surface and the island part. In the third preparation step, a second leadframe including a first part, a second part, a frame part, a first connecting part and a second connecting part is prepared. In the placing step, the second leadframe is placed with a second conductive paste interposed between the first part and the first electrode and with a third conductive paste interposed between the second part and the second electrode. In the curing step, the first conductive paste, the second conductive paste and the third conductive paste are hardened.

Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.

An anisotropic conductive film that can be produced in high productivity and can reduce a short circuit occurrence ratio has a first conductive particle layer in which conductive particles are dispersed at a predetermined depth in a film thickness direction, and a second conductive particle layer in which conductive particles are dispersed at a depth different from that in the first conductive particle layer. In the respective conductive particle layers, the closest distances between the adjacent conductive particles are 2 times or more the average particle diameters of the conductive particles.

A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin having a phenolic hydroxyl group as an end group (A); a radiation-polymerizable compound (B); and a photoinitiator (C), a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer, and a semiconductor device using the photosensitive resin composition.

The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin having a phenolic hydroxyl group as an end group (A); a radiation-polymerizable compound (B); and a photoinitiator (C), a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer, and a semiconductor device using the photosensitive resin composition.

Provided are a paste material, a method of forming the paste material, a wiring member formed from the paste material, and an electronic device including the wiring member. The paste material may include a plurality of liquid metal particles and a polymer binder. The paste material may further include a plurality of nanofillers. At least some of the plurality of nanofillers may each have an aspect ratio equal to or greater than about 3. A content of the plurality of liquid metal particles may be greater than a content of the polymer binder and may be greater than a content of the plurality of nanofillers. The wiring member may be formed by using the paste material, and the wiring member may be used in various electronic devices.