The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

An electrical device includes a substrate, an insulating layer supported by the substrate, and an electrically conductive vertical interconnect disposed in a via hole of the insulating layer. The insulating layer may be configured to provide a coefficient of thermal expansion (CTE) that is equal to or greater than a CTE of the vertical interconnect to thereby impart axial compressive forces at opposite ends of the interconnect. The vertical interconnect may be a hybrid interconnect structure including a low CTE conductor post having a pocket that contains a high CTE conductor contact. At low operating temperatures, the high CTE conductor contact is under tension due to the higher CTE, and thus the high CTE conductor contact relieves strain in the device by void expansion and elongation.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

In a method for connecting components during production of power electronics modules or assemblies, surfaces of the components have a metallic surface layer upon supply, or are furnished therewith, wherein the layer has a surface that is smooth enough to allow direct bonding or is smoothed to obtain a surface that is smooth enough to allow direct bonding. The surface layers of the surfaces that are to be connected are then pressed against each other with a pressure of at least 5 MPa at elevated temperature, so that they are joined to each other, forming a single layer. The method enables simple, rapid connection of even relatively large contact surfaces, which satisfies the high requirements of power electronics modules.

In a method for connecting components during production of power electronics modules or assemblies, surfaces of the components have a metallic surface layer upon supply, or are furnished therewith, wherein the layer has a surface that is smooth enough to allow direct bonding or is smoothed to obtain a surface that is smooth enough to allow direct bonding. The surface layers of the surfaces that are to be connected are then pressed against each other with a pressure of at least 5 MPa at elevated temperature, so that they are joined to each other, forming a single layer. The method enables simple, rapid connection of even relatively large contact surfaces, which satisfies the high requirements of power electronics modules.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

A semiconductor device includes a conductive can include a flat portion and at least one peripheral rim portion extending from an edge of the flat portion, a semiconductor die comprising a first main face and a second main face opposite to the first main face, a first contact pad disposed on the first main face and a second contact pad disposed on the second main face, wherein the first contact pad is electrically connected to the flat portion of the can, an electrical interconnector connected with the second contact pad, and an encapsulant disposed under the semiconductor die so as to surround the electrical interconnector, wherein an external surface of the electrical interconnector is recessed from an external surface of the encapsulant.