Provided are a packaging method and packaging structure for a semiconductor chip. The packaging method comprises: providing a wafer, the wafer being provided with multiple semiconductor chips, each semiconductor chip being provided with a functional area and solder pads arranged on a first surface; providing a protective substrate, multiple support units being provided on the protective substrate, openings being formed on the support units; aligning the solder pads to the openings and facing support units provided on the protective substrate to the first surface of the wafer, and pressing together the wafer and the protective substrate. The packaging method effectively prevents the support units from generating stress that acts on the solder pads in a subsequent reliability test, thus preventing cases of the solder pad being damaged or split into layers.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

A microelectronic assembly including an insulating layer having a plurality of nanoscale conductors disposed in a nanoscale pitch array therein and a pair of microelectronic elements is provided. The nanoscale conductors can form electrical interconnections between contacts of the microelectronic elements while the insulating layer can mechanically couple the microelectronic elements together.

An electrical device includes a substrate, an insulating layer supported by the substrate, and an electrically conductive vertical interconnect disposed in a via hole of the insulating layer. The insulating layer may be configured to provide a coefficient of thermal expansion (CTE) that is equal to or greater than a CTE of the vertical interconnect to thereby impart axial compressive forces at opposite ends of the interconnect. The vertical interconnect may be a hybrid interconnect structure including a low CTE conductor post having a pocket that contains a high CTE conductor contact. At low operating temperatures, the high CTE conductor contact is under tension due to the higher CTE, and thus the high CTE conductor contact relieves strain in the device by void expansion and elongation.

A microelectronic assembly including an insulating layer having a plurality of nanoscale conductors disposed in a nanoscale pitch array therein and a pair of microelectronic elements is provided. The nanoscale conductors can form electrical interconnections between contacts of the microelectronic elements while the insulating layer can mechanically couple the microelectronic elements together.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

Provided is a packaging method, including: providing a base with a groove in its surface, which includes at least one pad exposed by the groove; providing a chip having a first surface and a second surface opposite to each other, at least one conductive bump being provided on the first surface of the chip; filling a first binder in the groove; applying a second binder on the first surface of the chip and the conductive bump; and installing the chip on the base, the conductive bump passing through the first binder and the second binder to connect with the pad.

Provided is a packaging method, including: providing a base with a groove in its surface, which includes at least one pad exposed by the groove; providing a chip having a first surface and a second surface opposite to each other, at least one conductive bump being provided on the first surface of the chip; filling a first binder in the groove; applying a second binder on the first surface of the chip and the conductive bump; and installing the chip on the base, the conductive bump passing through the first binder and the second binder to connect with the pad.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.