An apparatus includes a first component layer. The component layer includes a first semiconductor device. The apparatus further includes a first hydrophilic layer and a first hydrophobic layer. The first hydrophobic layer is positioned between the first component layer and the first hydrophilic layer. The apparatus further includes a first contact extending through the first hydrophobic layer and the first hydrophilic layer.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A semiconductor package structure comprises a substrate, a die bonded to the substrate, and one or more stud bump structures connecting the die to the substrate, wherein each of the stud bump structures having a stud bump and a solder ball encapsulating the stud bump to enhance thermal dissipation and reduce high stress concentrations in the semiconductor package structure.

A material includes a base resin; a solvent; and a foaming agent and a photosensitizer, and/or a substance that serves as a foaming agent and a photosensitizer.

A semiconductor device includes a semiconductor layer that has a main surface, an electrode pad that is formed on the main surface, a rewiring that has a first wiring surface connected to the electrode pad and a second wiring surface positioned on a side opposite to the first wiring surface and being roughened, the rewiring being formed on the main surface such as to be drawn out to a region outside the electrode pad, and a resin that covers the second wiring surface on the main surface and that seals the rewiring.

Provided is a display backplate includes including an array substrate and a plurality of pairs of connection structures on the array substrate, wherein the array substrate includes a plurality of thin-film transistors and a common electrode signal line, wherein at least one of the plurality of thin-film transistors is connected to one of a pair of connection structures and the common electrode signal line is connected to the other of the pair of connection structures; and an area of a first section of the connection structure is negatively correlated with a distance between the first section and a surface of the array substrate, and the first section is parallel to the surface of the array substrate.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.

A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.