A method for manufacturing a component carrier includes forming a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, providing a component having one or more pads and at least one dielectric layer on at least one main surface of the component such that the dielectric layer at least partially covers one or more pads of the component, placing the component on a temporary carrier, and embedding the component between the temporary carrier and the at least one insulating layer structure by pressing the component into the at least one insulating layer structure.

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

A chip packaging structure includes a circuit redistribution structure, a chip, a sealing layer, and an antenna pattern. The circuit redistribution structure includes a first and a second circuit layer, and a conductive pad. The second circuit layer is disposed on and electrically connected to the first circuit layer. The conductive pad is electrically connected to the second circuit layer. The chip is disposed on the circuit redistribution structure and electrically connected to the second circuit layer. The sealing layer having an opening and a groove covers the chip and the circuit redistribution structure. The opening exposes the conductive pad. A portion of the groove communicates with the opening. The antenna pattern includes a first and a second portion. The first portion covers sidewalls of the opening and is electrically connected to the conductive pad. The second portion is filled in the groove and electrically connected to the first portion.

A System in Package, SiP semiconductor device includes a substrate of laser direct structuring, LDS, material. First and second semiconductor die are arranged at a first and a second leadframe structure at opposite surfaces of the substrate of LDS material. Package LDS material is molded onto the second surface of the substrate of LDS material. The first semiconductor die and the package LDS material lie on opposite sides of the substrate of LDS material. A set of electrical contact formations are at a surface of the package molding material opposite the substrate of LDS material. The leadframe structures include laser beam processed LDS material. The substrate of LDS material and the package LDS material include laser beam processed LDS material forming at least one electrically-conductive via providing at least a portion of an electrically-conductive line between the first semiconductor die and an electrical contact formation at the surface of the package molding material opposite the substrate.

A semiconductor chip is mounted on a leadframe. A first portion of an insulating package for the semiconductor chip is formed from laser direct structuring (LDS) material molded onto the semiconductor chip. A conductive formation (provided by laser-drilling the LDS material and plating) extends between the outer surface of the first portion of insulating package and the semiconductor chip. An electrically conductive clip is applied onto the outer surface of the first portion of the insulating package, with the electrically conductive clip electrically coupled to the conductive formation and the leadframe. A second portion of the insulating package is made from package molding material (epoxy compound) molded onto the electrically conductive clip and applied onto the outer surface of the first portion of the insulating package.

An electrical device with printed interconnects between packaged integrated circuit components and a substrate as well as a method for printing interconnects between packaged integrated circuit components and a substrate are disclosed. An electrical device with printed interconnects may include a dielectric layer forming a continuous surface between a substrate and a terminal face of an integrated circuit component. The electrical device may further include interconnects formed from a layer of material printed across the continuous surface formed by the dielectric layer to connect electrical terminals on the substrate to electrical terminals on the terminal face of the integrated circuit component.

A component carrier includes a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, and a component having one or more pads and at least one dielectric layer on at least one main surface of the component. The at least one dielectric layer does not extend beyond the main surface in a lateral direction. The dielectric layer at least partially covers one or more pads of the component. In addition, at least one electrically conductive contact extends through at least one opening in the dielectric layer up to at least one of the pads.

A method for manufacturing a component carrier includes forming a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, providing a component having one or more pads and at least one dielectric layer on at least one main surface of the component such that the dielectric layer at least partially covers one or more pads of the component, placing the component on a temporary carrier, and embedding the component between the temporary carrier and the at least one insulating layer structure by pressing the component into the at least one insulating layer structure.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.

Leadframes for semiconductor devices are manufactured by providing a laminar substrate of laser direct structuring material, the laminar substrate comprising first and second opposed surfaces, applying laser beam processing to the substrate to provide a first pattern of electrically-conductive formations at the first surface, a second pattern of electrically-conductive formations at the second surface and electrically-conductive vias through the substrate between the first surface and the second surface. Electrically-conductive material is formed, for instance via electrolytic or electroless growth of electrically-conductive material such a copper onto the first and second pattern of electrically-conductive formations as well as onto the electrically-conductive vias provided by applying laser beam processing to the substrate. The electrically-conductive vias are coupled to one or both of the electrically-conductive formations in the first pattern of electrically-conductive formations and the second pattern of electrically-conductive formations.