The present invention provides a bonding method (S1) which is capable of achieving a high adhesive force without carrying out any special treatment on the second member (14), even in a case where the first member (11) has a surface on which a gold thin film (12) is formed. The first member (11) is made of a material other than gold and has a surface on which the gold thin film (12) is formed. The bonding method (S1) includes the steps of: (S11) irradiating, with laser light, at least part of a specific region (12a) of the surface of the first member (11), so that a base of the thin film (12) is exposed in the at least part of the specific region (12a); and (S12) bonding the second member (14) to the specific region (12a) by use of an adhesive (13).

The present invention provides a bonding method (S1) which is capable of achieving a high adhesive force without carrying out any special treatment on the second member (14), even in a case where the first member (11) has a surface on which a gold thin film (12) is formed. The first member (11) is made of a material other than gold and has a surface on which the gold thin film (12) is formed. The bonding method (S1) includes the steps of: (S11) irradiating, with laser light, at least part of a specific region (12a) of the surface of the first member (11), so that a base of the thin film (12) is exposed in the at least part of the specific region (12a); and (S12) bonding the second member (14) to the specific region (12a) by use of an adhesive (13).

A semiconductor device includes, an alloy layer sandwiched between a first Ag layer formed on a mounting board or circuit board and a second Ag layer formed on a semiconductor element, wherein the alloy layer contains an intermetallic compound of Ag.sub.3Sn formed by Ag components of the first Ag layer and the second Ag layer and Sn, and wherein a plurality of wires containing Ag are arranged extended from an outside-facing periphery of the alloy layer.