A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, first dielectric material layers overlying the first semiconductor devices, and first metal interconnect structures, providing a second semiconductor die containing a second substrate, second semiconductor devices, second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures, depositing a manganese layer on a top surface of the first dielectric material layers, disposing the second semiconductor die on the manganese layer such that a surface of the second dielectric material layers contacts the manganese layer, and performing a bonding anneal to bond the first semiconductor die to the second semiconductor die and to convert the manganese layer into a manganese-containing oxide layer, such that the manganese-containing oxide layer is bonded to the first dielectric material layers and the second dielectric material layers.

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L.sub.100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L.sub.150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L.sub.200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L.sub.700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.

A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

A method utilized at a sintered metal layer bonding a semiconductor element and a support substrate together suppresses cracks appearing in the sintered metal layer, and damage to the semiconductor element. A semiconductor device includes a support substrate, a semiconductor element, and a sintered metal layer bonding the support substrate and the semiconductor element. The sintered metal layer has a low porosity region disposed inward of an outer edge of the semiconductor element with the sintered metal layer bonded to the semiconductor element. The region is lower in porosity than the remaining sintered metal layer, and is formed as a wall-shaped structural body having an elongated string and extending from an upper surface to a lower surface of the sintered metal layer. The low porosity region is disposed to surround a region immediately below a center of the semiconductor element along the outer edge of the semiconductor element.

A film-shaped fired material of the present invention is a film-shaped fired material 1 which contains sinterable metal particles 10 and a binder component 20, in which a time (A1) after the start of a temperature increase, at which a negative gradient is the highest, in a thermogravimetric curve (TG curve) measured from 40° C. to 600° C. at a temperature-rising-rate of 10° C./min in an air atmosphere and a maximum peak time (B1) in a time range of 0 seconds to 2160 seconds after the start of a temperature increase in a differential thermal analysis curve (DTA curve) measured from 40° C. to 600° C. at a temperature-rising-rate of 10° C./min in an air atmosphere using alumina particles as a reference sample satisfy a relationship of “A1<B1<A1+200 seconds” and a relationship of “A1<2000 seconds”.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A method for producing a stable sandwich arrangement of two components with solder situated therebetween, comprising the steps: (1) providing two components, each having at least one contact surface, and a free solder preform, (2) producing a sandwich arrangement of the components and a solder preform arranged between them and thus not yet connected to them by bringing into contact (i) each one of the contact surfaces, (ii) each of the single contact surface of the components or (iii) one of the contact surfaces of one component and a single contact surface of the other component, with the contact surfaces of the free solder preform, and (3) hot-pressing the sandwich arrangement produced in step (2) so as to form the stable sandwich arrangement at a temperature being at 10 to 40% below the melting temperature of the solder metal of the solder preform, expressed in ° C.

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

An object of the present invention is to provide an electrically conductive paste and a sintered body thereof having a low electric resistance value and excellent electrical conductivity when made into a sintered body.

An electrically conductive paste comprising: a flake-like silver powder having a median diameter D50 of 15 μm or less; a silver powder having a median diameter D50 of 25 μm or more; and a solvent, wherein the content of the flake-like silver powder is 15 to 70 parts by mass and the content of the silver powder having a median diameter D50 of 25 μm or more is 30 to 85 parts by mass based on 100 parts by mass in total of the flake-like silver powder and the silver powder having a median diameter D50 of 25 μm or more.