Methods for bonding two wafers are disclosed. In one aspect, a first wafer includes an integrated circuit and the second wafer including a MEMS device. The method comprises depositing a bond pad on a metal on the first wafer and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures. The second wafer is bonded to the bond pad at the first temperature and the bond pad and the metal are bonded at the second temperature. In another aspect, a first wafer including an integrated circuit, the second wafer includes a MEMS device. The method comprises depositing a bond pad on a metal on one of the first wafer and the second wafer and bonding the first wafer to the second wafer at a first temperature via a direct bond interface. The method includes bonding the bond pad to the metal at a second temperature.

The present invention addresses the problem of providing a conductive paste that achieves both low resistance and high adhesion strength (die shear strength) of the resulting conductive body after firing.

The present invention provides a conductive paste comprising: (A) copper fine particles having an average particle diameter of 50 nm to 400 nm and a crystallite diameter of 20 nm to 50 nm; (B) copper particles having an average particle diameter of 0.8 μm to 5 μm and a ratio of a crystallite diameter to the crystallite diameter of the copper particles (A) of 1.0 to 2.0; and (C) a solvent.

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

A method includes: providing a package body including a mounting part having a chip mounting region for mounting a semiconductor chip, a side wall part having a first sealing surface continuously provided over an entire perimeter of the mounting part, surrounding the chip mounting region and provided on the mounting part, a first recess provided on the first sealing surface, and a first solder outflow prevention part continuously provided on the first sealing surface and positioned closer to the chip mounting region side than the first recess; providing a cap having a second sealing surface facing the first sealing surface; providing a ball solder made of an alloy of gold and tin as principal ingredients; placing the ball solder in the first recess; placing the cap on the ball solder; and melting once and then solidifying the ball solder to bond the first sealing surface and the second sealing surface.

A method includes: providing a package body including a mounting part having a chip mounting region for mounting a semiconductor chip, a side wall part having a first sealing surface continuously provided over an entire perimeter of the mounting part, surrounding the chip mounting region and provided on the mounting part, a first recess provided on the first sealing surface, and a first solder outflow prevention part continuously provided on the first sealing surface and positioned closer to the chip mounting region side than the first recess; providing a cap having a second sealing surface facing the first sealing surface; providing a ball solder made of an alloy of gold and tin as principal ingredients; placing the ball solder in the first recess; placing the cap on the ball solder; and melting once and then solidifying the ball solder to bond the first sealing surface and the second sealing surface.

A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.