Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula C.sub.nH.sub.2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160° C.

In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

A die bonding structure is provided. The die bonding structure includes a chip, an adhesive layer under the chip, a bonding layer under the adhesive layer, and a heat dissipation substrate under the bonding layer. The bonding layer includes a silver nano-twinned thin film, which has parallel-arranged twin boundaries. The parallel-arranged twin boundaries include at least 90% of [111] crystal orientation.

A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

The present invention relates to a method of forming a joint bonding together two solid objects and joints made by the method, where the joint is formed by a layer of a binary system which upon heat treatment forms a porous, coherent and continuous single solid-solution phase extending across a bonding layer of the joint.

The present invention relates to a method of forming a joint bonding together two solid objects and joints made by the method, where the joint is formed by a layer of a binary system which upon heat treatment forms a porous, coherent and continuous single solid-solution phase extending across a bonding layer of the joint.