A package manufacturing having a semiconductor substrate, a bonding layer, at least one semiconductor device, a redistribution circuit structure and an insulating encapsulation. The bonding layer is disposed on the semiconductor substrate. The at least one semiconductor device is disposed on and in contact with a portion of the bonding layer, wherein the bonding layer is located between the semiconductor substrate and the at least one semiconductor device and adheres the at least one semiconductor device onto the semiconductor substrate. The redistribution circuit structure is disposed on and electrically connected to the at least one semiconductor device, wherein the at least one semiconductor device is located between the redistribution circuit structure and the bonding layer. The insulating encapsulation wraps a sidewall of the at least one semiconductor device, wherein a sidewall of the bonding layer is aligned with a sidewall of the insulating encapsulation and a sidewall of the redistribution circuit structure.

Provided is a multilayer substrate obtained by laminating semiconductor substrates each having a trough electrode. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are each selectively present at a position where the through electrodes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through electrodes are connected by the conductive particles, and the semiconductor substrates each having the through electrode are bonded by an insulating adhesive.

Ensure conduction between an electronic component and a circuit substrate having reduced pitches in wiring of the circuit substrate or electrodes of the electronic component and prevent short circuits between electrode terminals of the electronic component. A connection body including an electronic component connected to a circuit substrate via an anisotropic conductive adhesive agent containing conductive particles; wherein the conductive particles are regularly arranged; and wherein the conductive particles have a particle diameter that is or less than a height of a connecting electrode of the electronic component.

Ensure conduction between an electronic component and a circuit substrate having reduced pitches in wiring of the circuit substrate or electrodes of the electronic component and prevent short circuits between electrode terminals of the electronic component. A connection body including an electronic component connected to a circuit substrate via an anisotropic conductive adhesive agent containing conductive particles; wherein the conductive particles are regularly arranged; and wherein the conductive particles have a particle diameter that is or less than a height of a connecting electrode of the electronic component.

According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure.

According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure.

A die bonding system and a die bonding method are disclosed, in which dies (10) fed from a first motion stage (100) serving as a die source are re-arranged on a transfer tray (20) carried on a second motion stage (200) and bonded to a substrate (30) carried on a third motion stage (300). Pickup and transfer of the dies (10) between the three motion stages are accomplished by two motion mechanisms (010, 020) in such a manner that the dies (10) picked up from the first motion stage (100) are placed on the second motion stage (200) in an arrangement based upon a required final arrangement of them on the substrate (30). In other words, the dies (10) are re-arranged according to the required arrangement on the substrate (30). In this way, the need for re-arranging the dies after the transfer tray (20) is flipped and before they are bonded to the substrate is eliminated. Therefore, with the die bonding system, multiple dies 10 are allowed to be transferred simultaneously to the substrate based on the process requirements by flipping the mechanism for flipping the dies only once, which results in enhanced production efficiency and time savings and addresses the requirements for mass production.

A display device includes a display panel, a first film attached to the display panel, an adhesive member interposed between the display panel and the first film and extending in a first direction to attach the display panel to the first film, a first test electrode covered by the adhesive member; a second test electrode covered by the adhesive member and spaced apart from the first test electrode in a second direction perpendicular to the first direction, and test lines comprising a first test line electrically connected to the first test electrode and a second test line electrically connected to the second test electrode, where the adhesive member is disposed between the first test electrode and the second test electrode in the second direction.

Provided is a semiconductor architecture including a carrier substrate, alignment marks provided in the carrier substrate, the alignment marks being provided from a first surface of the carrier substrate to a second surface of the carrier substrate, a first semiconductor device provided on the first surface of the carrier substrate based on the alignment marks, a second semiconductor device provided on the second surface of the carrier substrate based on the alignment marks and aligned with the first semiconductor device.

In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.