H01L2224/83203

Copper paste for pressureless bonding, bonded body and semiconductor device

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 μm and less than or equal to 0.8 μm, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 μm and less than or equal to 50 μm, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
20220399299 · 2022-12-15 ·

A display device includes a substrate including a display area and a pad area, a plurality of pad electrodes disposed in the pad area on the substrate, a circuit board disposed to overlap at least a portion of the pad area on the substrate, and an anisotropic conductive layer disposed in the pad area between the substrate and the circuit board. The circuit board includes a base substrate and a plurality of bump electrodes disposed on a lower surface of the base substrate. The anisotropic conductive layer includes an adhesive layer and a plurality of conductive particles arranged in the adhesive layer. Each of the conductive particles includes a core, a first conductive film disposed on the core in a way such that at least a portion of the core is exposed, and a second conductive film entirely covering the core and the first conductive film.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
11521950 · 2022-12-06 · ·

According to one embodiment, in a semiconductor manufacturing apparatus, a controller relatively moves a bonding tool and a stage close to each other while causing a semiconductor chip to adhere by suction to a surface via a tape using at least a first suction structure in a first period. In a second period, the controller controls the temperature of the bonding tool to a first target temperature while keeping substantially equal to a target pressure a pressure applied to the semiconductor chip by the bonding tool. In a third period, the controller controls a relative distance between the bonding tool and the stage so that the pressure applied to the semiconductor chip by the bonding tool is kept equal to the target pressure and controls the temperature of the bonding tool to a second target temperature. The second target temperature is higher than the first target temperature.

COMPOSITION FOR PROVISIONAL FIXATION AND METHOD FOR PRODUCING BONDED STRUCTURE
20220380639 · 2022-12-01 ·

A temporary fixing composition is provided that is used to temporarily fix a first bonding target material and a second bonding target material to each other before the two bonding target materials are bonded to each other. The temporary fixing composition contains a first organic component having a viscosity of less than 70 mPa.Math.s at 25° C. and a boiling point of 200° C. or lower and a second organic component having a viscosity of 70 mPa.Math.s or greater at 25° C. and a boiling point of 210° C. or higher. It is preferable that, when thermogravimetry-differential thermal analysis is performed under the conditions at a temperature increase rate of 10° C./min in a nitrogen atmosphere with a sample mass of 30 mg, the 95% mass reduction temperature is lower than 300° C.

COMPOSITION FOR PROVISIONAL FIXATION AND METHOD FOR PRODUCING BONDED STRUCTURE
20220380639 · 2022-12-01 ·

A temporary fixing composition is provided that is used to temporarily fix a first bonding target material and a second bonding target material to each other before the two bonding target materials are bonded to each other. The temporary fixing composition contains a first organic component having a viscosity of less than 70 mPa.Math.s at 25° C. and a boiling point of 200° C. or lower and a second organic component having a viscosity of 70 mPa.Math.s or greater at 25° C. and a boiling point of 210° C. or higher. It is preferable that, when thermogravimetry-differential thermal analysis is performed under the conditions at a temperature increase rate of 10° C./min in a nitrogen atmosphere with a sample mass of 30 mg, the 95% mass reduction temperature is lower than 300° C.

METHOD OF MANUFACTURING LIGHT-RECEIVING DEVICE AND LIGHT-RECEIVING DEVICE
20220384510 · 2022-12-01 · ·

A sensor array and a read-out circuit are prepared. The sensor array and the read-out circuit are aligned such that each first electrode and each second electrode face each other in a state where a connection material is disposed between a second area of the sensor array and a fourth area of the read-out circuit. The read-out circuit is pressed against the sensor array with a first load such that the sensor array and the readout circuit are bonded by the connection material with a gap provided between each first electrode and each second electrode. The read-out circuit is pressed against the sensor array with a second load larger than the first load so that each first electrode and each second electrode are connected. Before the pressing with the second load, either one of the first electrode and the second electrode has a conical shape.

SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
20220384378 · 2022-12-01 ·

A semiconductor package is provided in which a first adhesive film includes a first extension portion extending relative to a side surface of a first semiconductor chip in a second direction, perpendicular to the first direction, the first extension portion has an upper surface including a first recess concave toward a base chip, each of the plurality of second adhesive films includes a second extension portion extending relative to side surfaces of the plurality of second semiconductor chips in the second direction, and the second extension portion has an upper surface including a second recess concave in the first direction and a lower surface including a protrusion in the first recess or the second recess.

PTFE sheet and method for mounting die

A PTFE sheet in which PTFE fibers having a diameter of 1 μm or less are spun, the PTFE sheet having a Gurley value in the range of 1 s/100 cc/in.sup.2 to 3 s/100 cc/in.sup.2 and a shrinkage factor in a direction orthogonal to a sheet winding direction of no more than 10% when heated to 300° C. The PTFE sheet makes a die adsorbable via a tool, which is for heating the die when the die is mounted on a mounting body, by being sandwiched between the die and the tool, and suppresses the adhesion, to an adsorption surface of the tool or to the die, of an adhesion member for fixing the die to the mounted body. Through this configuration, a PTFE sheet capable of stabilizing vacuum adsorption and improving maintainability and a method for mounting a die are provided.

Flexible circuit film bonding apparatus and method of bonding flexible circuit film using the same

A flexible circuit film bonding apparatus includes: a stage configured to support a TFT substrate; a pressing head configured to press and heat a flexible circuit film attached on the TFT substrate with an anisotropic conductive film interposed therebetween; a backup plate configured to support and heat the TFT substrate positioned below the flexible circuit film; and a heating control unit configured to control a temperature of a lower surface of the pressing head and an upper surface of the backup plate, wherein the temperature of the upper surface of the backup plate is less than 170 degrees Celsius.

Flexible circuit film bonding apparatus and method of bonding flexible circuit film using the same

A flexible circuit film bonding apparatus includes: a stage configured to support a TFT substrate; a pressing head configured to press and heat a flexible circuit film attached on the TFT substrate with an anisotropic conductive film interposed therebetween; a backup plate configured to support and heat the TFT substrate positioned below the flexible circuit film; and a heating control unit configured to control a temperature of a lower surface of the pressing head and an upper surface of the backup plate, wherein the temperature of the upper surface of the backup plate is less than 170 degrees Celsius.