A method for manufacturing a semiconductor component including: providing a flat carrier with an upper side and a lower side, the carrier including a continuous opening that runs between the upper side and the lower side; providing a semiconductor arrangement that includes a semiconductor chip that includes electrically and/or optically active regions on a lower side; arranging the semiconductor arrangement in the opening such that a lower side of the semiconductor arrangement and the lower side of the carrier run in a common plane; casting the semiconductor arrangement with a potting compound, such that the semiconductor arrangement is materially connected to the carrier; and thinning out the semiconductor system by way of grinding from above, such that an upper side of the carrier and an upper side of the semiconductor arrangement run in a common plane.

A method of manufacturing a semiconductor device includes a step of preparing a semiconductor element including a functional surface on which a bump is formed and an adhesive layer of a film shape including a flux component, a step of positioning the semiconductor element above a board including an electrode, a step of activating a flux component by applying ultrasonic vibration to the semiconductor element, a step of bringing the bump into contact with the electrode by pressing the semiconductor element to the board, and a step of bonding the bump to the electrode by continuing the application of the ultrasonic vibration and the pressing of the semiconductor element.

A chip package structure includes a circuit structure, a redistribution structure, a heat conductive component, a chip, and a heat sink. The circuit structure includes a first circuit layer. The redistribution structure is disposed on the circuit structure and includes a second circuit layer, wherein the redistribution structure has an opening. The heat conductive component is disposed on the circuit structure and covered by the redistribution structure. The heat conductive component has a horizontal portion and a vertical portion. The horizontal portion extends toward the opening until it exceeds the opening. The vertical portion extends upward beyond the top surface of the redistribution structure from a part of the horizontal portion. The chip is disposed in the opening, and the bottom of the chip contacts the heat conductive component. The heat sink is disposed over the redistribution structure and the chip.

Embodiments of the present disclosure include a method of forming an electronic assembly with a mesh bond layer. The method may include forming a mesh bond material comprising a first surface spaced apart from a second surface by a thickness of the mesh bond material and one or more openings extending from the first surface through the thickness of the mesh bond material to the second surface. The method may further include adjusting at least one of: the thickness of the mesh bond material, a geometry of the one or more openings, or a size of the one or more openings of the mesh bond material, where the adjusting modifies a Young's modulus of the mesh bond material, and bonding the first surface of the mesh bond material to a surface of a semiconductor device.

Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

An object of the present invention is to provide a highly reliable semiconductor device that allows voids remaining in a bonding material to be reduced. The semiconductor device includes a semiconductor chip, an insulation substrate, a metal base plate, a resin section, and a bump. The semiconductor chip is warped into a concave shape. On the insulation substrate, the semiconductor chip is mounted by bonding. The metal base plate has the insulation substrate mounted thereon and has a heat dissipation property. The resin section seals the insulation substrate and the semiconductor chip. The bump is disposed in a joint between the semiconductor chip and the insulation substrate. A warp amount of the semiconductor chip warped into a concave shape is equal to or greater than 1 m and less than a height of the bump.

An object of the present invention is to provide a highly reliable semiconductor device that allows voids remaining in a bonding material to be reduced. The semiconductor device includes a semiconductor chip, an insulation substrate, a metal base plate, a resin section, and a bump. The semiconductor chip is warped into a concave shape. On the insulation substrate, the semiconductor chip is mounted by bonding. The metal base plate has the insulation substrate mounted thereon and has a heat dissipation property. The resin section seals the insulation substrate and the semiconductor chip. The bump is disposed in a joint between the semiconductor chip and the insulation substrate. A warp amount of the semiconductor chip warped into a concave shape is equal to or greater than 1 m and less than a height of the bump.

An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes: an upper surface; a lower surface; and a side surface 1 connecting the upper surface with the lower surface; the ceramic substrate includes: a lowest portion; a side surface 2 connecting the lowest portion with the side surface 1 of the conductor layer; and a bonding surface at a position higher than the lowest portion, the bonding surface being bonded to the lower surface of the conductor layer; an absolute value (||) is 20 or less on average; and the side surface 1 has a receding portion from an end of the upper surface in the normal direction relative to the tangential line of the contour of the conductor layer as viewed in plane.

An apparatus includes a needle including a hole extending from a first end to a second end through the needle and an energy-emitting device arranged in the hole of the needle. The energy-emitting device being configured to emit a specific wavelength and intensity of energy directed at an electrically-actuatable element to bond a circuit trace and the electrically-actuatable element.

A circuit board having a circuit pattern on a base plate and an additional metal layer laid and bonded on the circuit pattern, wherein the additional metal layer comprises an attachment plane portion configured to fix a semiconductor chip using solder, and an engagement uneven portion provided adjacent to the attachment plane portion, wherein the attachment plane portion is a face having unevenness smaller than the engagement uneven portion.