An apparatus includes a needle and a needle actuator to move the needle to a position at which the needle presses an electrically-actuatable element into contact with a circuit trace. When the needle presses the electrically-actuatable element into contact with the circuit trace, a dampener, arranged with the needle and the needle actuator, dampens a force applied to the electrically-actuatable element.

A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

In a power-module substrate unit, a circuit layer is structured by a plurality of small circuit layers; a ceramic substrate layer is structured by at least one plate; the small circuit layers are formed to have a layered structure having a first aluminum layer bonded on one surface of the ceramic substrate layer and a first copper layer bonded on the first aluminum layer by solid diffusion; a radiation plate is made of copper or copper alloy; the metal layer and the radiation plate are bonded by solid diffusion.

A thermal interface sheet includes a peripheral portion, in a surface direction, configured to have a melting point higher than the melting point of a central portion in the surface direction.

A thermal interface sheet includes a peripheral portion, in a surface direction, configured to have a melting point higher than the melting point of a central portion in the surface direction.

In a power-module substrate unit, a circuit layer is structured by a plurality of small circuit layers; a ceramic substrate layer is structured by at least one plate; the small circuit layers are formed to have a layered structure having a first aluminum layer bonded on one surface of the ceramic substrate layer and a first copper layer bonded on the first aluminum layer by solid diffusion; a radiation plate is made of copper or copper alloy; the metal layer and the radiation plate are bonded by solid diffusion.

A circuit arrangement has a populated circuit carrier and includes a flat insulation carrier having a top side and a patterned metallization layer on the top side and a first power semiconductor chip arranged on a first section of the metallization layer. The first power semiconductor chip has a first lower chip load terminal electrically conductively connected to the first section. A shunt resistor is arranged on a second section of the metallization layer. The shunt resistor has a lower main terminal electrically conductively connected to the second section. An electrically conductive connection is provided between the first section and the second section. The electrically conductive connection includes a constriction between the first section and the second section so that a current which flows between the first lower chip load terminal and the lower main terminal during operation of the circuit arrangement must pass through the constriction.

A circuit arrangement has a populated circuit carrier and includes a flat insulation carrier having a top side and a patterned metallization layer on the top side and a first power semiconductor chip arranged on a first section of the metallization layer. The first power semiconductor chip has a first lower chip load terminal electrically conductively connected to the first section. A shunt resistor is arranged on a second section of the metallization layer. The shunt resistor has a lower main terminal electrically conductively connected to the second section. An electrically conductive connection is provided between the first section and the second section. The electrically conductive connection includes a constriction between the first section and the second section so that a current which flows between the first lower chip load terminal and the lower main terminal during operation of the circuit arrangement must pass through the constriction.

A method including: attaching a plurality of conductive tracks to at least one surface of a substrate, depositing a coating comprising at least one halo-hydrocarbon polymer on the at least one surface of the substrate, and soldering through the coating.