A semiconductor package may include a substrate having an upper surface on which a plurality of first pads are disposed and a lower surface on which a plurality of second pads are disposed. The semiconductor package may further include a semiconductor chip disposed on the upper surface of the substrate on which connection electrodes connected to a first set of the plurality of first pads are disposed. The semiconductor package may include an interposer having an upper surface on which a plurality of first connection pads, connected to a second set of the plurality of first pads, and a plurality of second connection pads are disposed. The semiconductor package may further include a plurality of connection terminals disposed on a set of the plurality of second connection pads of the interposer, and a molding material disposed on the upper surface of the substrate.

A semiconductor package may include a substrate having an upper surface on which a plurality of first pads are disposed and a lower surface on which a plurality of second pads are disposed. The semiconductor package may further include a semiconductor chip disposed on the upper surface of the substrate on which connection electrodes connected to a first set of the plurality of first pads are disposed. The semiconductor package may include an interposer having an upper surface on which a plurality of first connection pads, connected to a second set of the plurality of first pads, and a plurality of second connection pads are disposed. The semiconductor package may further include a plurality of connection terminals disposed on a set of the plurality of second connection pads of the interposer, and a molding material disposed on the upper surface of the substrate.

A semiconductor device die transfer apparatus includes a first frame to hold a wafer tape having a plurality of semiconductor device die disposed on a side of the wafer tape and a second frame to secure a product substrate having a circuit trace thereon. The second frame is configured to secure the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device die on the wafer tape. Additionally, a rotary transfer collet is disposed between the wafer tape and the product substrate. The rotary transfer collet has a rotational axis allowing rotation from a first position facing the wafer tape to pick a die of the plurality of semiconductor device die to a second position facing the circuit trace on the product substrate to release the die, thereby applying the die directly on the product substrate during a transfer operation.

A laser bonding apparatus, a method of bonding a plurality of semiconductor devices arranged on a main substrate of a workpiece, to the main substrate, and a method of manufacturing a semiconductor package, the laser bonding apparatus including a chamber having a transmissive window and in which a workpiece is accommodatable; a gas supply conduit connected to the chamber and configured to supply a gas at an elevated pressure relative to a pressure outside of the chamber; and a laser generator arranged outside the chamber and configured to irradiate the workpiece accommodated in the chamber, through the transmissive window.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

Embodiments of the present disclosure include a method of forming an electronic assembly with a mesh bond layer. The method may include forming a mesh bond material comprising a first surface spaced apart from a second surface by a thickness of the mesh bond material and one or more openings extending from the first surface through the thickness of the mesh bond material to the second surface. The method may further include adjusting at least one of: the thickness of the mesh bond material, a geometry of the one or more openings, or a size of the one or more openings of the mesh bond material, where the adjusting modifies a Young's modulus of the mesh bond material, and bonding the first surface of the mesh bond material to a surface of a semiconductor device.