Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.

The present invention relates to a reel-to-reel layer reflow method, which emits a uniformized laser beam, which can easily adjust the emission area, and which is for the purpose of improving productivity. An embodiment of the present invention provides a reel-to-reel layer reflow method comprising the steps of: a) transferring a substrate, which has been wound in a roll type, to one side while unwinding the same; b) forming a solder portion on the substrate; c) seating an emission target element on the solder portion and seating a non-emission target element on the substrate; d) surface-emitting a laser beam to the solder portion, on which the emission target element is seated, such that the emission target element is attached to the substrate; e) inspecting the substrate structure manufactured through said step d); and f) winding the substrate structure in a roll type.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A micro-light emitting diode (LED) display and a method of fabricating the same. The method includes aligning a display backplane and a source semiconductor wafer with one another. A plurality of backplane contact pads of a first width are fixed to the backplane and include first solder pads thereon with a second width smaller than the first width. The wafer includes thereon a plurality of micro-LEDs, and a plurality of micro-LED contact pads fixed to the micro-LEDs and having a third width smaller than the first width. The method includes: aligning such that at least some of the micro-LED contact pads register with corresponding first solder pads; releasing at least some of the micro-LEDs from the wafer onto corresponding first solder pads; and forming a plurality of second solder pads by melting the corresponding first solder pads. The second solder pads bond the at least some of the micro-LEDs to corresponding ones of the plurality of backplane contact pads, the second solder pads further extending on said corresponding ones of the plurality of backplane contact pads beyond a footprint thereon of said some of the micro-LEDs.

Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.

Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.

A method includes loading a wafer tape into a first frame, the wafer tape having a first side and a second side, a first semiconductor device die being disposed on the first side of the wafer tape. A substrate is loaded into a second frame, the substrate including a second semiconductor device die onto which the first semiconductor device die is to be transferred. A needle is oriented to a position adjacent to the second side of the wafer tape, the needle extending in a direction toward the wafer tape, and a needle actuator connected to the needle is activated to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

A semiconductor device die transfer apparatus includes a first frame to hold a wafer tape having a plurality of semiconductor device die disposed on a side of the wafer tape and a second frame to secure a product substrate having a circuit trace thereon. The second frame is configured to secure the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device die on the wafer tape. Additionally, a rotary transfer collet is disposed between the wafer tape and the product substrate. The rotary transfer collet has a rotational axis allowing rotation from a first position facing the wafer tape to pick a die of the plurality of semiconductor device die to a second position facing the circuit trace on the product substrate to release the die, thereby applying the die directly on the product substrate during a transfer operation.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.