An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to secure the wafer tape and a support frame configured to secure a support substrate. The support substrate includes a plurality of holes and secures the product substrate. The apparatus further includes an actuator to transfer the semiconductor die to a transfer location on the product substrate.

The present invention provides a conductive material in which, even when the conductive material is left for a certain period of time, solder of conductive particles can be efficiently placed on an electrode, and, in addition, yellowing of the conductive material can be sufficiently suppressed during heating. The conductive material according to the present invention contains a plurality of conductive particles having solder at an outer surface portion of a conductive portion, a curable compound, and a boron trifluoride complex.

Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste.

Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 m as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250 C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste.

Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 m as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250 C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

An optical package structure includes a substrate having a first surface, an interposer bonded to the first surface through a bonding layer, the interposer having a first area from a top view perspective, and an optical device on the interposer, having a second area from the top view perspective, the first area being greater than the second area. A method for manufacturing the optical package structure is also provided.

An optical package structure includes a substrate having a first surface, an interposer bonded to the first surface through a bonding layer, the interposer having a first area from a top view perspective, and an optical device on the interposer, having a second area from the top view perspective, the first area being greater than the second area. A method for manufacturing the optical package structure is also provided.

Electronic assembly methods and structures are described. In an embodiment, an electronic assembly method includes bringing together an electronic component and a routing substrate, and directing a large area photonic soldering light pulse toward the electronic component to bond the electronic component to the routing substrate.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to secure the wafer tape and a support frame configured to secure a support substrate. The support substrate includes a plurality of holes and secures the product substrate. The apparatus further includes an actuator to transfer the semiconductor die to a transfer location on the product substrate.