A package includes a carrier substrate, a first die, and a second die. The first die includes a first bonding layer, a second bonding layer opposite to the first bonding layer, and an alignment mark embedded in the first bonding layer. The first bonding layer is fusion bonded to the carrier substrate. The second die includes a third bonding layer. The third bonding layer is hybrid bonded to the second bonding layer of the first die.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

An integrated circuit (IC) chip carrier includes an IC chip electrically connected to an IC chip carrier by a plurality of chip-carrier contacts, a cover thermally connected the IC chip upper surface, and an in-plane thermal conductance (ITC) layer upon the IC chip carrier between the IC chip carrier and the IC chip. The ITC layer includes an extension tab connected to a vertical side surface of the cover. Heat is transferred vertically from the IC chip to the cover. Heat is also transferred vertically from the IC chip to the ITC layer. Heat is also transferred within the ITC layer through the ITC layer basal plane(s). The ITC layer basal plane(s) are positioned horizontally where the ITC layer is between the IC chip and the IC chip carrier. The ITC layer basal planes are positioned vertically where the extension tab contacts the vertical side surface of the cover.

An integrated circuit (IC) chip carrier includes an IC chip electrically connected to an IC chip carrier by a plurality of chip-carrier contacts, a cover thermally connected the IC chip upper surface, and an in-plane thermal conductance (ITC) layer upon the IC chip carrier between the IC chip carrier and the IC chip. The ITC layer includes an extension tab connected to a vertical side surface of the cover. Heat is transferred vertically from the IC chip to the cover. Heat is also transferred vertically from the IC chip to the ITC layer. Heat is also transferred within the ITC layer through the ITC layer basal plane(s). The ITC layer basal plane(s) are positioned horizontally where the ITC layer is between the IC chip and the IC chip carrier. The ITC layer basal planes are positioned vertically where the extension tab contacts the vertical side surface of the cover.

An integrated circuit (IC) chip carrier includes an IC chip electrically connected to an IC chip carrier by a plurality of chip-carrier contacts, a cover thermally connected the IC chip upper surface, and an in-plane thermal conductance (ITC) layer upon the IC chip carrier between the IC chip carrier and the IC chip. The ITC layer includes an extension tab connected to a vertical side surface of the cover. Heat is transferred vertically from the IC chip to the cover. Heat is also transferred vertically from the IC chip to the ITC layer. Heat is also transferred within the ITC layer through the ITC layer basal plane(s). The ITC layer basal plane(s) are positioned horizontally where the ITC layer is between the IC chip and the IC chip carrier. The ITC layer basal planes are positioned vertically where the extension tab contacts the vertical side surface of the cover.