A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

A method of manufacturing a package is disclosed. In one example, the method comprises providing a carrier with at least one component mounting region for mounting at least one electronic component. The carrier is pre-warped in accordance with an initial curvature direction. At least one electronic component is provided, the at least one electronic component comprises at least one first electrode on a first surface and at least one second electrode on a second surface, wherein the second surface is opposite to the first surface. The at least one electronic component is mounted with the second surface on the at least one component mounting region by a solder structure. Ambient conditions are applied to the carrier and to the at least one electronic component during mounting so that the carrier is re-warped to thereby at least partially reduce warpage of the carrier in a mounting plane.

A semiconductor device includes a die carrier, a semiconductor die disposed on a main face of the die carrier, the semiconductor die including one or more contact pads, an encapsulant covering at least partially the semiconductor die and at least a portion of the main face of the die carrier, an insulation layer covering the encapsulant, and one or more electrical interconnects, each being connected with one of the one or more contact pads of the semiconductor die and extending through the encapsulant.

A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a second heat removal body mounted on or above the at least one electronic chip by a second interconnection, and an encapsulant encapsulating at least part of the at least one electronic chip, part of the first heat removal body and part of the second heat removal body, wherein the first interconnection is configured to have another melting temperature than the second interconnection.

A method for fabricating a semiconductor device includes: providing a die carrier; disposing a semiconductor die on a main face of the die carrier, the semiconductor die having one or more contact pads; applying an encapsulant at least partially to the semiconductor die and at least a portion of the main face of the die carrier; applying an insulation layer to the encapsulant; and fabricating electrical interconnects by forming openings into the encapsulant and the insulation layer and filling a conductive material into the openings. Additional methods for fabricating a semiconductor device are described.

An electronic component is disclosed. The electronic component comprises a semiconductor body, an active region in a central portion of the semiconductor body, and a stress release structure for releasing stress and being formed as a lateral edge portion of the semiconductor body. The lateral edge portion has a minimum thickness of not more than 40% of a maximum thickness of the semiconductor body.

A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a second heat removal body mounted on or above the at least one electronic chip by a second interconnection, and an encapsulant encapsulating at least part of the at least one electronic chip, part of the first heat removal body and part of the second heat removal body, wherein the first interconnection is configured to have another melting temperature than the second interconnection.