An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

A printed circuit board includes: a first insulating layer; a first cavity disposed in one surface of the first insulating layer; a plurality of protrusion portions spaced apart from each other in the first cavity; and a first wiring layer embedded in the one surface of the first insulating layer.

A printed circuit board includes: a first insulating layer; a first cavity disposed in one surface of the first insulating layer; a plurality of protrusion portions spaced apart from each other in the first cavity; and a first wiring layer embedded in the one surface of the first insulating layer.

An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

According to one embodiment, a controller is configured to calculate a matching rate of grid shapes between each semiconductor wafer of a first semiconductor wafer group and each semiconductor wafer of a second semiconductor wafer group, and generate pairing information, into which combinations of semiconductor wafers used in calculation of matching rates are registered when the matching rates fall within a predetermined range. Further, the controller is configured to select a first semiconductor wafer to be held by a first semiconductor wafer holder from the first semiconductor wafer group, and select a second semiconductor wafer from semiconductor wafers of the second semiconductor wafer group, which are paired with the first semiconductor wafer, with reference to the pairing information.

According to one embodiment, a controller is configured to calculate a matching rate of grid shapes between each semiconductor wafer of a first semiconductor wafer group and each semiconductor wafer of a second semiconductor wafer group, and generate pairing information, into which combinations of semiconductor wafers used in calculation of matching rates are registered when the matching rates fall within a predetermined range. Further, the controller is configured to select a first semiconductor wafer to be held by a first semiconductor wafer holder from the first semiconductor wafer group, and select a second semiconductor wafer from semiconductor wafers of the second semiconductor wafer group, which are paired with the first semiconductor wafer, with reference to the pairing information.

A semiconductor structure is disclosed. The semiconductor structure includes: a polymer base layer, a backside redistribution layer (RDL) over the polymer base layer; a molding layer over the backside RDL; a polymer layer over the molding layer, a front side RDL over the polymer layer; and a metal-insulator-metal (MIM) capacitor vertically passing through the molding layer, the MIM capacitor including a first electrode, an insulation layer and a second electrode, wherein the insulation layer surrounds the first electrode, and the second electrode surrounds the insulation layer, and the molding layer surrounds the second electrode. An associated method for manufacturing a semiconductor structure is also disclosed.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.