A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

A semiconductor package includes a semiconductor substrate, a plurality of first dies, a plurality of thermal conductive patterns and an interposer. The first dies are bonded to the semiconductor substrate. The thermal conductive patterns are bonded to the semiconductor substrate. The interposer is bonded to the first dies, and the first dies and the thermal conductive patterns are disposed between the semiconductor substrate and the interposer.

Electrical connection between electrodes provided respectively at facing positions in joint surfaces of substrates to be joined by chip lamination technology is conducted more securely. A method of manufacturing a semiconductor device includes: a first step of embedding electrodes in insulating layers exposed to the joint surfaces of a first substrate and a second substrate; a second step of subjecting the joint surfaces of the first substrate and the second substrate to chemical mechanical polishing, to form the electrodes into recesses recessed as compared to the insulating layers; a third step of laminating insulating films of a uniform thickness over the entire joint surfaces; a fourth step of forming an opening by etching in at least part of the insulating films covering the electrodes of the first substrate and the second substrate; a fifth step of causing the corresponding electrodes to face each other and joining the joint surfaces of the first substrate and the second substrate to each other; and a sixth step of heating the first substrate and the second substrate joined to each other, causing the electrode material to expand and project through the openings, and joining the corresponding electrodes to each other.

Methods and structures of a three-dimensional memory device are disclosed. In an example, the method for forming a memory device includes the following operations. First, a plurality of first semiconductor channels can be formed over a first wafer with a peripheral device and a plurality of first via structures neighboring the plurality of first semiconductor channels. The plurality of first semiconductor channels can extend along a direction perpendicular to a surface of the first wafer. Further, a plurality of second semiconductor channels can be formed over a second wafer with a plurality of second via structures neighboring the plurality of second semiconductor channels. The plurality of second semiconductor channels can extend along a direction perpendicular to a surface of the second wafer and a peripheral via structure.

A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry. The bonded structure can include an obstructive element bonded to the semiconductor element along a bond interface, the obstructive element including an obstructive material disposed over the active circuitry, the obstructive material configured to obstruct external access to the active circuitry. The bonded element can include an artifact structure indicative of a wafer-level bond in which the semiconductor element and the obstructive element formed part of respective wafers directly bonded prior to singulation.

A package includes a semiconductor carrier, a first die, a second die, a first encapsulant, a second encapsulant, and an electron transmission path. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The second encapsulant laterally encapsulates the second die. The electron transmission path is electrically connected to a ground voltage. A first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die and penetrates through the first encapsulant, and a third portion of the electron transmission path is aside the second die and penetrates through the second encapsulant.

A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry. The bonded structure can include an obstructive element bonded to the semiconductor element along a bond interface, the obstructive element including an obstructive material disposed over the active circuitry, the obstructive material configured to obstruct external access to the active circuitry. The bonded element can include an artifact structure indicative of a wafer-level bond in which the semiconductor element and the obstructive element formed part of respective wafers directly bonded prior to singulation.

The present application discloses a semiconductor device with an etch stop layer having greater thickness and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor die including a first conductive layer, a first etch stop layer positioned on the first conductive layer, a second semiconductor die including a second conductive layer positioned above the first etch stop layer, a second etch stop layer positioned on the second conductive layer, a first through substrate via positioned along the second semiconductor die and the first etch stop layer, extended to the first semiconductor die, and positioned on the first conductive layer, and a second through substrate via extended to the second semiconductor die, positioned along the second etch stop layer, and positioned on the second conductive layer. A thickness of the second etch stop layer is greater than a thickness of the first etch stop layer.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.