A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

A manufacturing method of a semiconductor apparatus includes preparing an intermediate member that includes a first member having a first substrate comprising a semiconductor element formed thereon, a second member having a second substrate, the second substrate including a part of a circuit electrically connected to the semiconductor element and having a linear expansion coefficient different from that of the first substrate, and a third member having a third substrate showing such a linear expansion coefficient that a difference between itself and the linear expansion coefficient of the first substrate is smaller than a difference between the linear expansion coefficients of the first substrate and the second substrate, and includes bonding the first member and the second member together. A first bonding electrode containing copper electrically connected to the semiconductor element and a second bonding electrode containing copper electrically connected to the circuit are bonded together.

A wafer-to-wafer bonding structure includes a first wafer including a first conductive pad in a first insulating layer and a first barrier layer surrounding a lower surface and side surfaces of the first conductive pad, a second wafer including a second conductive pad in a second insulating layer and a second barrier layer surrounding a lower surface and side surfaces of the second conductive pad, the second insulating layer being bonded to the first insulating layer, and at least a portion of an upper surface of the second conductive pad being partially or entirely bonded to at least a portion of an upper surface of the first conductive pad, and a third barrier layer between portions of the first and second wafers where the first and second conductive pads are not bonded to each other.

A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

Embodiments of the present invention are directed to processing methods and resulting structures that leverage wafer bonding techniques to provide stacked field effect transistors (SFETs) with high-quality N/P junction isolation. In a non-limiting embodiment of the invention, a first semiconductor structure is formed on a first wafer and a second semiconductor structure is formed on a second wafer. The first wafer is positioned with respect to the second wafer such that a top surface of the first semiconductor structure is directly facing a top surface of the second semiconductor structure. A bonding layer is formed between the top surface of the first semiconductor structure and the top surface of the second semiconductor structure and the first wafer is bonded to the second wafer at a first temperature. The device is annealed at a second temperature to cure the bonding layer. The anneal temperature is greater than the bonding temperature.

A technique for making high performance low noise amplifiers, low cost high performance RF, microwave circuits and other devices by using a minimum of costly high performance semiconductors is described. By combining a single discrete portion of an expensive semiconductor with a less expensive GaAs carrier, MMIC devices with improved performance over their discrete counterparts are achieved.

A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.

Packaged semiconductor devices including heat-dissipating structures and methods of forming the same are disclosed. In an embodiment, a semiconductor package includes a semiconductor die including a substrate, a front-side interconnect structure on a front-side of the substrate, and a backside interconnect structure on a backside of the substrate opposite the front-side interconnect structure; a support die disposed on the front-side interconnect structure; a heat-dissipating structure on the support die, the heat-dissipating structure being thermally coupled to the semiconductor die and the support die; a redistribution structure on the backside interconnect structure opposite the substrate, the redistribution structure being electrically coupled to the semiconductor die; and an encapsulant on the redistribution structure and adjacent to side surfaces of the semiconductor die, the support die, and the heat-dissipating structure.

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

The present application discloses a semiconductor device with an etch stop layer having greater thickness and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor die including a first conductive layer, a first etch stop layer positioned on the first conductive layer, a second semiconductor die including a second conductive layer positioned above the first etch stop layer, a second etch stop layer positioned on the second conductive layer, a first through substrate via positioned along the second semiconductor die and the first etch stop layer, extended to the first semiconductor die, and positioned on the first conductive layer, and a second through substrate via extended to the second semiconductor die, positioned along the second etch stop layer, and positioned on the second conductive layer. A thickness of the second etch stop layer is greater than a thickness of the first etch stop layer.