Energy is locally supplied to a cutting surface that is formed in an outer circumferential region of a wafer in a trimming step, before a grinding step of grinding the wafer. This can remove or repair at least part of a damage layer formed in the outer circumferential region of the wafer due to the trimming step. As a result, breakage of the wafer that originates from the outer circumferential region in the grinding of the wafer which has been subjected to the edge trimming and generation of dust in a step after this grinding can be suppressed.

Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

An object of the present invention is to provide a nanobubble-containing inorganic oxide fine particle dispersion having excellent concentration stability in a process used as an abrasive. The object is achieved by the nanobubble-containing inorganic oxide fine particle dispersion including: inorganic oxide fine particles having an average particle size of 1 to 500 nm and containing fine particles containing Ce; and nanobubbles having an average cell size of 50 to 500 nm and being at least one non-oxidizing gas selected from a group consisting of N.sub.2 and H.sub.2.

A method of processing a workpiece includes sticking an adhesive layer side of a resin sheet having a layered structure that includes an adhesive layer and a base material layer, to an annular frame having an opening in covering relation to the opening, forming surface irregularities on a face side of the base material layer that is opposite the adhesive layer, placing the face side of the workpiece and the face side of the base material layer in facing relation to each other and pressing the workpiece against the resin sheet or pressing the resin sheet against the workpiece, thereby bringing the workpiece into intimate contact with the resin sheet to fix the workpiece to the resin sheet, holding the face side of the workpiece fixed to the resin sheet on a holding surface of a chuck table, and grinding the reverse side of the workpiece with a grinding stone.

A method of processing a workpiece includes sticking an adhesive layer side of a resin sheet having a layered structure that includes an adhesive layer and a base material layer, to an annular frame having an opening in covering relation to the opening, forming surface irregularities on a face side of the base material layer that is opposite the adhesive layer, placing the face side of the workpiece and the face side of the base material layer in facing relation to each other and pressing the workpiece against the resin sheet or pressing the resin sheet against the workpiece, thereby bringing the workpiece into intimate contact with the resin sheet to fix the workpiece to the resin sheet, holding the face side of the workpiece fixed to the resin sheet on a holding surface of a chuck table, and grinding the reverse side of the workpiece with a grinding stone.

A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further contain at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid.