Disclosed is a turntable cloth peeling jig including: a cylindrical winding cylinder including a slit formed on an outer periphery of the cylindrical winding cylinder and extending in an axial direction thereof; a cloth clamping member disposed inside the winding cylinder and configured to clamp an outer peripheral edge of a cloth inserted into the slit; an extension bar attached to one end portion of the winding cylinder so as to extend coaxially therewith; an engaging portion provided at a tip end portion of the extension bar and engaged with a rotation jig configured to rotate the winding cylinder; and a handle provided in the engaging portion and configured to support the winding cylinder when rotating the rotating jig.

Disclosed is a turntable cloth peeling jig including: a cylindrical winding cylinder including a slit formed on an outer periphery of the cylindrical winding cylinder and extending in an axial direction thereof; a cloth clamping member disposed inside the winding cylinder and configured to clamp an outer peripheral edge of a cloth inserted into the slit; an extension bar attached to one end portion of the winding cylinder so as to extend coaxially therewith; an engaging portion provided at a tip end portion of the extension bar and engaged with a rotation jig configured to rotate the winding cylinder; and a handle provided in the engaging portion and configured to support the winding cylinder when rotating the rotating jig.

Disclosed is a substrate processing apparatus that includes: a polishing table; an atomizer configured to spray a fluid to a polishing surface; a polishing liquid supply nozzle configured to drop a slurry at a position that corresponds to a slurry dropping position set on the polishing table and is lower than the top surface of the atomizer; a nozzle moving mechanism configured to move the polishing liquid supply nozzle above the atomizer between the retreat position set outside the polishing table and the slurry dropping position; and a nozzle tip retreating mechanism configured to bring the tip end of the polishing liquid supply nozzle into a retreated position above the top surface of the atomizer when the polishing liquid supply nozzle moves between the slurry dropping position and the retreat position.

Disclosed is a substrate processing apparatus that includes: a polishing table; an atomizer configured to spray a fluid to a polishing surface; a polishing liquid supply nozzle configured to drop a slurry at a position that corresponds to a slurry dropping position set on the polishing table and is lower than the top surface of the atomizer; a nozzle moving mechanism configured to move the polishing liquid supply nozzle above the atomizer between the retreat position set outside the polishing table and the slurry dropping position; and a nozzle tip retreating mechanism configured to bring the tip end of the polishing liquid supply nozzle into a retreated position above the top surface of the atomizer when the polishing liquid supply nozzle moves between the slurry dropping position and the retreat position.

A method of fabricating ultra-thin semiconductor devices includes forming an array of semiconductor dielets mechanically suspended on a frame with at least one tether connecting each semiconductor dielet of the array of semiconductor dielets to the frame.

A method of fabricating ultra-thin semiconductor devices includes forming an array of semiconductor dielets mechanically suspended on a frame with at least one tether connecting each semiconductor dielet of the array of semiconductor dielets to the frame.

A mask-integrated surface protective tape, containing: a substrate film; a temporary-adhesive layer provided on the substrate film; and a mask material layer provided on the temporary-adhesive layer; wherein the mask material layer and the temporary-adhesive layer each contain a (meth)acrylic copolymer; and wherein the mask-integrated surface protective tape is used for a method of producing a semiconductor chip utilizing a plasma-dicing.

A mask-integrated surface protective tape, containing: a substrate film; a temporary-adhesive layer provided on the substrate film; and a mask material layer provided on the temporary-adhesive layer; wherein the mask material layer and the temporary-adhesive layer each contain a (meth)acrylic copolymer; and wherein the mask-integrated surface protective tape is used for a method of producing a semiconductor chip utilizing a plasma-dicing.

Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness Ra.sub.PRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 .Math.m or more.

This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.