A processing device and method for safely processing a wafer having bumps formed on a surface thereof. A processing device is provided with: a chuck capable of holding a bump region of a wafer; a support ring having a support surface for supporting a bend region which extends from the bump region to an outer peripheral region and in which a film is bent, the support ring capable of supporting the outer peripheral region of the wafer; and a chuck table in which the chuck is housed substantially centrally and the support ring is housed around the chuck.

A processing device and method for safely processing a wafer having bumps formed on a surface thereof. A processing device is provided with: a chuck capable of holding a bump region of a wafer; a support ring having a support surface for supporting a bend region which extends from the bump region to an outer peripheral region and in which a film is bent, the support ring capable of supporting the outer peripheral region of the wafer; and a chuck table in which the chuck is housed substantially centrally and the support ring is housed around the chuck.

A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.

A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.

A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R.sup.0 represents an ethyl group, a propyl group, or an isopropyl group; and each of R.sup.A and R.sup.B represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %.

##STR00001##

Provided are a method for supplying water of specified concentration, including: a step of adding at least two liquids, a conductive first liquid and a non-conductive second liquid, to ultrapure water to produce water of specified concentration containing a first liquid-component and a second liquid-component at specified concentrations, in which a mixed solution in which the first liquid and the second liquid are mixed at a specified mixing ratio in advance is prepared; and the mixed solution is added to the ultrapure water so that a conductivity or specific resistance of the ultrapure water after the addition satisfies a specified value, and an apparatus therefor.

A fluid supply device and a fluid supply method capable of stably supplying a supercritical fluid includes a fluid supply device for supplying a fluid in a liquid state before being changed to a supercritical fluid toward a processing chamber. The fluid supply device comprises a condenser that condenses and liquefies a fluid in a gas state, a tank that stores the fluid condensed and liquefied by the condenser, a pump that pressure-feeds the liquefied fluid stored in the tank toward the processing chamber, and a heating means provided to a flow path communicating with a discharge side of the pump and for partially changing the liquid in the flow path to a supercritical fluid.

A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.

There is provided a grinding method that is applied when a workpiece having a first surface and a second surface is to be ground from the second surface. The grinding method includes a first grinding step of causing first grindstones to come into contact with the workpiece to grind the workpiece and thereby form on the workpiece a circular plate-shaped first thin plate portion and an annular first thick plate portion surrounding the first thin plate portion, and a second grinding step of causing second grindstones to come into contact with the first thick plate portion and the first thin plate portion to grind the workpiece and thereby form on the workpiece a thin circular plate-shaped second thin plate portion that has a larger diameter than the first thin plate portion and an annular second thick plate portion surrounding the second thin plate portion.

There is provided a grinding method that is applied when a workpiece having a first surface and a second surface is to be ground from the second surface. The grinding method includes a first grinding step of causing first grindstones to come into contact with the workpiece to grind the workpiece and thereby form on the workpiece a circular plate-shaped first thin plate portion and an annular first thick plate portion surrounding the first thin plate portion, and a second grinding step of causing second grindstones to come into contact with the first thick plate portion and the first thin plate portion to grind the workpiece and thereby form on the workpiece a thin circular plate-shaped second thin plate portion that has a larger diameter than the first thin plate portion and an annular second thick plate portion surrounding the second thin plate portion.