A base plate with a first side having an elevated portion, a recessed portion laterally surrounding the elevated portion, and a vertical face extending from the recessed portion to the elevated portion is provided. At least a part of the vertical face is covered with a metal layer. A mold compound structure is formed on the first side with the metal layer disposed between the first side and the mold compound structure such that the mold compound structure includes an elevated portion laterally surrounding a recessed portion, and opposing edge faces that vertically extend from the recessed portion to the elevated portion. At least a part of the base plate is subsequently removed such that the recessed portion of the mold compound structure is uncovered from the base plate and such that the metal layer remains on at least one uncovered section of the mold compound structure.

A clad material for a cooler is provided by executing production of a tensile strain of 3 to 10% or rolling at a finish rolling ratio of 10 to 25%, and optionally performing a heat treatment for 1 to 8 hours at a temperature within a range from 150 to 400° C., on a clad raw material having a three layer structure of a core material, a first brazing filler metal layer that covers one side (the surface on the side of a cooling water passage) of this core material, and a second brazing filler metal layer that covers the other side (the surface on the opposite side from the cooling water passage). Specific ranges are prescribed for certain properties before and after brazing.

This invention relates to a method of manufacturing an object with microchannels provides therethrough, and more particularly, but not exclusively, to a method of manufacturing a micro heat exchanger with microchannels provided therethrough. The method includes the steps of providing a metal base layer made from a first metal; forming a plurality of spaced apart ridges, made from a second metal, on the base layer; depositing more of the first metal onto the ridges in order to cover the ridges; and re moving the ridges using a chemical etching process so as to produce microchannels in a body made of the first metal.

Disclosed is a semiconductor package system comprising a substrate, a first semiconductor package on the substrate, and a heat radiation structure on the first semiconductor package. The heat radiation structure includes a first part on a top surface of the first semiconductor package and a second part connected to the first part. The second part has a bottom surface at a level lower than a level of the top surface of the first semiconductor package. A vent hole is provided between an edge region of the substrate and the first part of the heat radiation structure.

In sonic examples, a method includes pre-stressing a flange, heating the flange to a die-attach temperature, and attaching a die to the flange at the die-attach temperature using a die-attach material. In some examples, the flange includes a metal material, the die-attach temperature may be at least two hundred degrees Celsius, and the die-attach material may include solder and/or an adhesive. In some examples, the method includes cooling the semiconductor die and metal flange to a room temperature after attaching the semiconductor die to the metal flange at the die-attach temperature using a die-attach material.

A thermal module is disclosed. The thermal module includes a radiating fin assembly and a base. The base has a bottom and a plurality of slot vertically extending through the base in a thickness direction thereof. The radiating fin assembly includes a plurality of radiating fins, each of which has a heat-dissipation end and a heat-absorption end. The heat-absorption ends are correspondingly extended through the slots and bent to bear on the bottom for contacting with a heat-producing element. Heat produced by the heat-producing element is absorbed by the heat-absorption ends and directly transferred from the heat-absorption ends to the heat-dissipation ends without the problem of thermal resistance. Therefore, upgraded heat transfer efficiency and excellent heat dissipation effect can be achieved with the thermal module.

An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor module 300 and a flow channel formation body 1000 on which the power semiconductor module 300 is disposed. The power semiconductor module 300 has a high thermal conductor 920 which is disposed at a position between a semiconductor chip and the flow channel formation body 1000 and a sealing material that seals a power semiconductor element and the high thermal conductor 920. The high thermal conductor 920 has a fin protruding to the flow channel formation body 1000 at the side of the flow channel formation body 1000 and a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

A semiconductor packaging structure includes a copper heat-sink with a shim projection which provides a stress release structure. The heat-sink with the shim projection may be used in conjunction with a pedestal in order to further reduce the thermal stress produced from the mismatch of thermal properties between the copper heat-sink metal and the ceramic frame. The copper heat-sink with a shim projection may also be part of the semiconductor package along with a lead frame, the ceramic frame, a semiconductor device, a capacitor, a wire bond and a ceramic lid or an encapsulation. The copper heat-sink, the ceramic frame and the lead frame are all chosen to be cost effective, and chosen such that the packaging process for the semiconductor device is able to achieve a smaller size while maintaining high reliability, low cost, and suitability for volume manufacturing.

A semiconductor module comprising a semiconductor apparatus and a cooling apparatus, where: the semiconductor apparatus includes a semiconductor chip and a circuit board on which the semiconductor chip is mounted; and the cooling apparatus includes: a top plate on which the semiconductor apparatus is mounted; a jacket including a side wall connected to the top plate, a bottom plate connected to the side wall and facing the top plate, and a cooling pin fin extending in such a manner as to taper from the bottom plate toward the top plate, where at least the bottom plate and the cooling pin fin are integrally formed, and at least one of ends of the cooling pin fin is firmly fixed to the top plate; and a coolant flow portion defined by the top plate and the jacket and for flow of coolant.

A substrate for mounting an electronic component according to an aspect of an embodiment includes a base that is a plate-shaped body, where a first surface of the base is sloped relative to a second surface that is opposed to the first surface, and when the base is bisected into a lower part and a higher part in a slope direction thereof, a thermal conductivity of the lower part is higher than a thermal conductivity of the higher part.