A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two upper surfaces and an upper edge. The upper edge is configured to support a disc-shaped substrate. An upper surface of the two upper surfaces has a groove having an increasing groove depth with increasing distance from the upper edge.

A device is for drying disc-shaped substrates. The device has an elongated body having a top surface, a bottom surface, and a circumferential surface. The elongated body has a hole in the top surface forming a channel, which extends to a lower drainage part of the elongated body, and is chamfered having a chamfer depth and a chamfer angle forming an edge between the chamfer and the top surface and forming a conical recess suitable for resting a disc shaped substrate. The chamfer angle is more than 10° and less than 30°. The chamfer depth is more than 6 mm and less than 12 mm.

A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.

Provided is a concentration control module that improve responsiveness of concentration control of a vaporization system, and is used in a vaporization system. The concentration control module includes a concentration measuring part configured to measure a concentration of a source gas; a valve provided in a lead-out pipe configured to lead out the source gas from the tank; a pressure target value calculating part configured to calculate a pressure target value inside the tank by using a concentration target value of the source gas, and a concentration measured value of the concentration measuring part; a delay filter configured to generate a pressure control value by applying a predetermined time delay to the pressure target value obtained by the pressure target value calculating part; and a valve control part configured to feedback-control the valve by using a deviation between the pressure control value obtained by the delay filter, and a pressure inside the tank.

A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

There are provided a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a stage on which a substrate is seated, in a chamber; and a treatment liquid supply apparatus supplying a treatment liquid containing a solvent and a solute onto the substrate, wherein the treatment liquid supply apparatus supplies the treatment liquid onto the substrate while moving from a center of the substrate to an outer peripheral surface of the substrate.

A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.

A substrate drying device is provided that can suppress occurrence of a micro size defect (for example, a defect having a defect size of 20 nm or less). A substrate drying device 1 includes a substrate holding unit 11 which holds a substrate W, a gas generator 60 which generates a drying gas G including at least IPA vapor and for drying the substrate W, and a drying gas nozzle 30 which supplies the drying gas G to the surface WA of the substrate W. A filter 67 for filtering the drying gas G is provided in the gas generator 60. A defect size D allowed in a defect test after the drying of the substrate W is set to 20 nm or less and a ratio D/F of the defect size D and a filter size F of the filter 67 is set to 4 or more.

A transport apparatus includes a hand, a drive mechanism, a cover member, and a gas supply member. The hand is configured to hold a wafer. The drive mechanism is configured to transport the wafer by moving the hand. The cover member has an opposing surface opposed to a surface of the wafer held by the hand and is formed with a plurality of holes opened in the opposing surface. The gas supply member is configured to supply an inert gas to the surface of the wafer via the plurality of holes of the cover member. The plurality of holes are formed in the opposing surface so that an opening ratio of an outer peripheral portion of the opposing surface is higher than an opening ratio of a central portion of the opposing surface.