The substrate treatment method includes a first decompressing step, a first pressurizing step, and a first atmospheric pressure step. In the first decompressing step, the inside of a chamber is in a decompressed state, and a first gas is supplied to a substrate inside the chamber. The first gas includes an organic solvent. The first pressurizing step is executed after the first decompressing step. In the first pressurizing step, mixed gas is supplied to the substrate inside the chamber, and the inside of the chamber is pressurized from the decompressed state to an atmospheric pressure state. The mixed gas includes an organic solvent and inert gas. The first atmospheric pressure step is executed after the first pressurizing step. In the first atmospheric pressure step, the inside of the chamber is maintained in the atmospheric pressure state, and at least any of liquid discharge treatment and substrate treatment is performed.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a body; a fluid supply unit for supplying a treating fluid to a treating space within the body; and a fluid exhaust line for exhausting the treating fluid from the treating space, and wherein the body includes: a first body; a second body relatively moving with respect to the first body; and an anti-friction member for preventing a friction between the first body and the second body, and wherein the anti-friction member is configured continuously cover at least two surfaces among surfaces of the first body and the second body.

A method for treating a substrate is provided. The method includes the following steps: performing a process of treating the substrate by dispensing a supercritical fluid onto the substrate. A treating fluid flows through a treating fluid supplying regulator regulating an amount of the treating fluid before dispensed onto the substrate. The treating fluid is heated to a set temperature or more by a first heater before passing through the treating fluid supplying regulator, and the treating fluid is heated by a second heater when the treating fluid is passed through the treating fluid supplying regulator. The temperature of the treating fluid is lowered in rear region of the treating fluid supplying regulator. The set temperature is a temperature that allows the lowered temperature to be maintained at a critical temperature or more.

A substrate processing method includes supplying a water-soluble polymer solution to a surface of a substrate having, on a surface of the substrate, a resist film on which no pattern is formed, after an immersion exposure process, hydrophilizing a surface of the resist film using the supplied water-soluble polymer solution, supplying, after the hydrophilizing, a cleaning liquid to the surface of the substrate while rotating the substrate to remove the water-soluble polymer solution that has not contributed to the hydrophilizing, and drying the substrate supplied with the cleaning liquid, wherein the water-soluble polymer solution has a pH value that allows an acid concentration in the resist film to fall within a permissible range.

In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

According to one embodiment, a substrate processing apparatus includes a batch type cleaning unit, a holding unit, and a single-substrate type drying unit. The batch type cleaning unit simultaneously cleans a plurality of substrates in a batch process with a first liquid. The holding unit receives the cleaned substrates while still wet and then keeps a first surface of each of the substrates wet with the first liquid. The single-substrate type drying unit is configured to receive the substrates one by one from the holding unit and then dry off the substrates one by one.

A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same. The processing system includes a process chamber, a boiler, a condenser, and one or more heat exchangers. The boiler generates a fluid, such as a vapor or supercritical fluid, and delivers the fluid to the process chamber where a substrate is processed. After processing the substrate, the system is depressurized and the fluid is delivered to the condenser where the fluid is condensed.

Methods and apparatuses for integrated cleaning of objects comprising a sequence of wet cleaning and vacuum drying in a same process chamber. The present integrated cleaning process can eliminate moving parts, improving the system reliability. Vacuum decontamination can be included for degassing and decontaminating the cleaned objects. In an embodiment, a cleaner system combines various movements into an integrated movement to be handled by a robot, for example, to improve the throughput. For example, an integrated robot movement comprising picking up a closed container from the input load port, moving both the lid and body together, and then depositing the body and lid separately into the appropriate positions in the cleaner to be cleaned.