The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

A substrate processing system includes: a substrate processing apparatus configured to process a substrate with a processing fluid; and a processing fluid supply apparatus configured to supply the processing fluid to the substrate processing apparatus. The processing fluid supply apparatus includes: a circulation line, a gas supply line, a cooler, a pump, a branch line, a heating unit, and a pressure regulator.

Provided is a substrate treating apparatus including: a fluid supply unit supplying a supercritical fluid to the treatment space, a plurality of components installed in the fluid supply line; and a detection member detecting whether or not metal particles are released from the component. The detection member includes: an upstream detection port connected to the fluid supply line upstream from a first component which is one of the plurality of components; a downstream detection port connected to the fluid supply line downstream from the first component; and a detector provided to be coupled to a selected detection port between the upstream detection port and the downstream detection port, and detecting metal particles from a fluid flowing through the detection port from the fluid supply line.

A substrate processing apparatus according to the invention executes a substrate processing using a supercritical processing fluid. In a processing container, a first introduction port is formed in such a manner as to face space over a substrate in the processing space and a second introduction port is formed in such a manner as to face space under a support tray in the processing space. A first discharge port is formed in such a manner as to face space over the support tray and a second discharge port is formed in such a manner as to face the space under the support tray. The supercritical processing fluid having a higher temperature is supplied into the processing space through the first introduction port, and the supercritical processing fluid having a lower temperature is supplied into the processing space through the second introduction port.

Provided is a substrate treating method. The substrate treating method includes: a first supercritical processing operation of loading a first substrate into a supercritical chamber and supercritically processing the first substrate in the supercritical chamber; a resting operation of maintaining the supercritical chamber in an empty state for a first time until a temperature in the supercritical chamber becomes a preset temperature by opening the supercritical chamber after the first substrate is unloaded from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and supercritically processing the second substrate in the supercritical chamber.

The present disclosure provides a substrate treating apparatus, in which stability is secured by performing a process under a lower pressure condition, and a substrate treating method using the same. The substrate treating apparatus comprises a chamber including a housing and a treating region, wherein a substrate on which a rinse liquid remains is loaded into the chamber, a supply port installed in the housing and for supplying a first drying gas and a second drying gas to the treating region, a first supply line connected to the supply port, and through which the first drying gas is moved, and a second supply line connected to the supply port, and through which the second drying gas is moved, wherein the first drying gas is a gas below a first temperature, and the second drying gas is a gas equal to or above the first temperature, wherein the second drying gas dries the rinse liquid remaining on the substrate.

A substrate processing apparatus includes: a processing vessel having an opening; a cover body configured to close the opening; a cover body moving mechanism configured to move the cover body between a closed position and an open position; a substrate holder configured to horizontally hold a substrate; a fluid supply device configured to supply a processing fluid in a supercritical state and a fluid in a gas state to the processing vessel; and a controller configured to control the fluid supply device such that the processing fluid is supplied to the processing vessel in a first state in which the substrate is held by the substrate holder and the cover body is located at the closed position, and such that the fluid is supplied to the processing vessel in a second state in which the cover body is located at the open position.

A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO.sub.2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.

Provided are a substrate storage apparatus and a substrate processing apparatus using the substrate storage apparatus. The substrate storage apparatus includes a housing having a loading/unloading port for loading/unloading of a substrate and configured to provide a loading space for a loaded substrate, a separation membrane coupled to the housing to divide the loading space into a plurality of separation spaces isolated from each other, a gas supplier configured to supply a purge gas into the loading space to clean the substrate, a gas discharger configured to discharge the purge gas accommodated in the loading space, and a controller configured to control supply and discharge of the purge gas for each of the plurality of separation spaces.