Patent classifications
H01L21/6704
Wet cleaning inside of gasline of semiconductor process equipment
Embodiments described herein relate to a gas line cleaning system and a method of cleaning gas lines. The gas line cleaning system includes a connector having a first end and a second end, and a fluid system. The fluid system includes a fluid source configured to flow a fluid through a fluid conduit connected to the first end, and an ultrasonic transducer coupled to the fluid conduit configured to apply an ultrasonic energy to the fluid conduit to agitate the fluid. The ultrasonic energy creates a mechanical energy that reverberates in the fluid conduit and propagates into the fluid to remove particles that may have formed on an inside surface of a gas line connected to the second end and carry away particles inside the gas line.
APPARATUS FOR TREATING SUBSTRATE
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber body having a top body and a bottom body which combine to provide a treating space therein; a substrate support unit configured to support a substrate at the treating space; a fluid supply unit configured to supply a treating fluid to the treating space; a fluid exhaust line for exhausting the treating fluid from the treating space; and a guide member provided to surround a periphery of the substrate supported by the substrate support unit.
PURIFICATION PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND PROCESSING METHOD
A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.
Wafer cleaning equipment
A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.
Particle prevention in wafer edge trimming
In some embodiments, the present disclosure relates to method for trimming and cleaning an edge of a wafer. The method includes trimming an outer edge portion of the wafer with a blade along a continuously connected trim path to define a new sidewall of the wafer. The trimming produces contaminant particles on the wafer. Further, the method includes applying deionized water to the new sidewall of the wafer with water nozzles to remove the contaminant particles. The method also includes applying pressurized gas to the wafer at a first top surface area of the wafer with an air jet nozzle. The pressurized gas is directed outward from a center of the wafer to remove remaining contaminant particles. The applying of deionized water and the applying of pressurized gas are performed in a same chamber as the trimming.
DAMPER CONTROL SYSTEM AND DAMPER CONTROL METHOD
The present invention relates to a damper control system and a damper control method for controlling an opening degree of an exhaust damper connected to an exhaust duct. The damper control system (300) includes an exhaust damper (310), a first pressure sensor (311), and a controller (315) configured to control an opening degree of the exhaust damper (310). The controller (315) is configured to switch the opening degree of the exhaust damper (310) to an opening degree smaller than a full opening on condition that a shutter (217) is opened.
METHOD AND APPARATUS FOR REMOVING PARTICLES OR PHOTORESIST ON SUBSTRATES
Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO.sub.3 solution accommodated in a DIO.sub.3 bath; after the one or more substrates are processed in the DIO.sub.3 bath, taking the one or more substrates out from the DIO.sub.3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO.sub.3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.
Platen Shield Cleaning System
In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.
SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD
The present invention provides a substrate treating method of treating a substrate including a plurality of cells, the substrate treating method including: a liquid treating operation of supplying a treatment liquid to the substrate; and a heating operation of heating the substrate by supplying the treatment liquid and irradiating laser light to a specific region located outside a region in which the plurality of cells is provided, in which the laser light is formed to cover the specific region when viewed from the top.
Spin head, apparatus and method for treating a substrate including the spin head
The present disclosure relates to a spin head, apparatus and method for treating a substrate including the spin head. The spin head includes a supporting plate where a substrate is placed and a chuck pin placed on the supporting plate and supporting a lateral portion of the substrate, wherein the chuck pin includes an outer body and an inner body inserted in the outer body and provided with a different material from the outer body, wherein each outer body and the inner body is provided with any one of a first material or a second material, and wherein one material of the first material and the second material is provided with a material having lower heat conductivity and better thermal resistance than another one.