A substrate cleaning apparatus includes: a support part configured to support a substrate by bring into contact with a rear surface of the substrate; an annular member disposed to surround a periphery of the substrate supported on the support part and including an inclined surface that is inclined with respect to a horizontal plane in a diametrical direction of the annular member; a rotation part configured to rotate the support part and the annular member; a first supply part configured to supply a cleaning liquid toward the rear surface of the substrate supported on the support part; and a second supply part configured to supply the cleaning liquid toward the inclined surface.

Systems and methods are described for dissolving ammonia gas in deionized water. The system includes a deionized water source and a gas mixing device including a first inlet for receiving ammonia gas, a second inlet for receiving a transfer gas, and a mixed gas outlet for outputting a gas mixture including the ammonia gas and the transfer gas. The system includes a contactor that receives the deionized water and the gas mixture and generates deionized water having ammonia gas dissolved therein. The system includes a sensor in fluid communication with at least one inlet of the contactor for measuring a flow rate of the deionized water, and a controller in communication with the sensor. The controller sets a flow rate of the ammonia gas based on the flow rate of the deionized water measured by the sensor, and a predetermined conductivity set point.

Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

A substrate cleaning apparatus comprises a substrate holding roller and an edge cleaner. The substrate holding roller is configured to hold and rotate a substrate to be processed. The edge cleaner is in contact with an edge portion of the substrate to be processed and includes resin material containing fluororesin particles at least in a portion in contact with the substrate to be processed.

A semiconductor processing apparatus is provided. The apparatus includes a body portion, which includes at least one semiconductor processing unit. Each semiconductor processing unit includes a recess formed on an upper surface of the body portion, wherein a bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity. Each semiconductor processing unit also includes a first channel that connects to the recess at the at least one location, as well as at least one second channel connecting to the recess at the peripheral. Each of the first channel and the at least one second channel serves as an inlet or an outlet via which a fluid enters or exits the recess. A method according to the present disclosure may control a flowing direction of a fluid flowing across a substrate surface. When the fluid flow as programmed, the fluid may contact the substrate surface and process the surface via various physical and/or chemical reactions.

A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

A cleaning apparatus capable of effectively removing dirt attached to a bottom surface of a heat exchanger, is disclosed. The cleaning apparatus cleans the heat exchanger for regulating a surface temperature of a polishing pad. This cleaning apparatus includes: a moving mechanism configured to move the heat exchanger between a temperature-regulating position in which the heat exchanger can exchange heat with the polishing pad, and a retreat position in which the heat exchanger is separated from a surface of the polishing pad; and a cleaning mechanism configured to clean a bottom surface of the heat exchanger moved to the retreat position The retreat position is located on a side of the polishing pad. The cleaning mechanism includes at least one cleaning nozzle for ejecting a cleaning liquid to the bottom surface of the heat exchanger, or a cleaning tank in which the bottom surface of the heat exchanger can be immersed.

A substrate processing method includes: supplying a pre-wet liquid to a substrate while rotating the substrate, and forming a liquid film of the pre-wet liquid on a surface of the substrate; supplying a chemical liquid at a first flow rate to the substrate while the substrate is being rotated at a first rotation speed, and processing the substrate with the chemical liquid to form a liquid film of the chemical liquid having a first thickness on the surface of the substrate; and supplying the chemical liquid to the substrate at a second supply flow rate while the substrate is being rotated at a second rotation speed, and performing a second chemical liquid processing on the substrate with the chemical liquid to form a liquid film of the chemical liquid having a second thickness on the surface of the substrate.

A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

The present disclosure provides a method of cleaning a wafer and a wafer cleaning apparatus. The method of cleaning a wafer includes: providing a wafer to be cleaned, the surface of the wafer having contaminants; and spraying a surfactant onto the surface of the wafer, and scrubbing the surface of the wafer with a polishing pad to remove the contaminants from the surface of the wafer.