In a substrate processing apparatus for supplying a processing liquid onto a lower surface of a substrate being rotated, to thereby process the substrate, provided are an upper support body which is separably placed on a lower support body, a plurality of upper holding members protruding downward from the upper support body, for holding the substrate, and an upper hold-driving part for moving the upper holding members separably from and contactably with an outer edge portion of the substrate. Preferably, the upper hold-driving part moves the upper holding members by using a magnetic action between holding-side magnetic members and an annular driving-side magnetic member.

A substrate processing system includes substrate processing apparatuses and a group management device. The substrate processing apparatuses each include a plan creating section. The plan creating section creates a plan indicating a timing when a processing liquid is used and a flow rate of the processing liquid. The processing liquid is supplied to the substrate processing apparatuses from a single resource system. The group management device includes a processing section. The processing section determines whether the total flow rate of the processing liquid to be used by the substrate processing apparatuses exceeds a threshold value based on the plans created by the substrate processing apparatuses. When determining that the total flow rate exceeds the threshold value, the processing section instructs one of the substrate processing apparatuses to adjust the plan thereof.

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

A silicon carbide semiconductor device includes a silicon carbide (SiC) substrate having a SiC epitaxial layer disposed over a surface of the SiC substrate, the SiC substrate having a first conductivity and the SiC epitaxial layer having the first conductivity. A contact region and a well region are formed in the SiC epitaxial layer, the contact region and the well region have a doping level of a second conductivity opposite the first conductivity. The contact region lies completely within the well region, is not in contact with a region having the first conductivity and has edges recessed from edges of the well region.

The present disclosure provides a liquid suck-back system and a liquid suck-back method, and belongs to the technical field of suck-back of liquid. The liquid suck-back system includes a suck-back pipeline and a suck-back pump. The suck-back pipeline includes a first port and a second port, the first port is connected to the suck-back pump, and the second port is connected to a liquid supply pipeline. The suck-back pipeline includes a suck-back valve and a water return bay, the liquid supply pipeline is configured to supply liquid chemicals, and the suck-back pump is configured to suck back residual liquid chemicals in the liquid supply pipeline when the liquid supply pipeline stops supplying liquid chemicals.

According to one embodiment, an etching apparatus includes a first container including an opening covered by a semiconductor substrate; a second container including an opening covered by a catalyst layer; a first flow path configured to communicate with the first container; a second flow path configured to communicate with the second container; a cation exchange film interposed between the first flow path and the second flow path and allowing at least protons to pass through; and an electric field applier configured to apply an electric field to the semiconductor substrate.

A semiconductor manufacturing apparatus for processing an object having a first surface and a second surface opposite to the first surface, includes: a first processor having a chuck in a first chamber, the chuck having a chuck surface configured to chuck the object, the chuck surface having protrusions adjacent to each other along one direction of the chuck surface, the protrusions being configured to be pressed against the second surface to form depressions adjacent to each other along one direction on the second surface; and a second processor configured to expose the second surface to a chemical solution in a second chamber to process the depressions into a trench, the trench extending along the one direction on the second surface.

In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Provided is a manufacturing method of semiconductor apparatus comprising a semiconductor substrate, the method comprising: grinding a first surface of the semiconductor substrate to form an outer peripheral surplus region on an outer periphery of the semiconductor substrate; and spin etching the first surface of the semiconductor substrate by a chemical liquid, and wherein after the grinding, in a region of the semiconductor substrate which is closer to an inner side than the outer peripheral surplus region, a thickness of the semiconductor substrate in an end portion of the region is greater than a thickness of the semiconductor substrate in a center portion of the region.

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.