A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.

Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.

A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

A substrate processing method includes forming a liquid film of an alkaline processing liquid on a substrate by supplying the alkaline processing liquid having a reduced oxygen concentration onto the substrate; and etching the substrate by rotating the substrate while supplying the alkaline processing liquid in a state that the liquid film having a given thickness is formed on the substrate.

A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Embodiments of the invention provide a non-uniform substrate polishing apparatus that includes a polishing pad with two or more zones, each zone adapted to apply a different slurry chemistry to a different area on a substrate to create a film thickness profile on the substrate having at least two different film thicknesses. Polishing methods and systems adapted to polish substrates are also provided, as are numerous other aspects.

A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided. A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (11a), which adjusts the concentration of the processing liquid, a first processing liquid path P1, through which the processing liquid flows to the processing liquid adjuster (11a), a second processing liquid path P2, through which the processing liquid flows to the processing liquid adjuster 11a, a first concentration meter 201a, which measures the concentration of the processing liquid flowing through the first processing liquid path P1, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (11a), a second concentration meter 201b, which measures the concentration of the processing liquid flowing through the second processing liquid path P2, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meter 201a in terms of concentration, a first valve mechanism 120a/130a, which opens and closes the first processing liquid path P1, and a second valve mechanism 120b/130b, which opens and closes the second processing liquid path P2.

A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces.

According to an embodiment, a substrate treatment apparatus includes, a substrate support unit supporting a substrate, a rotary unit rotating the substrate, a treatment liquid supply unit supplying treatment liquid to a surface of the substrate, and a controller performing liquid discharge treatment to change liquid discharge velocity at which the treatment liquid is discharged from the substrate, at preset predetermined timing, during substrate treatment in which the treatment liquid is supplied while the substrate is rotated, with the treatment continued.