A heat treatment device includes: a heating plate that supports and heats a substrate on which a resist film is formed, and the resist film is subjected to an exposure process; a chamber that covers a processing space above the heating plate; a gas ejecting unit that ejects a processing gas from above toward the substrate on the heating plate within the chamber; a gas supply unit that supplies a gas into the chamber from below a surface of the substrate, within the chamber; and an exhaust unit that evacuates inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

A substrate treating method includes measuring an alignment state of a substrate placed on a hand of a transfer unit that transfers the substrate, transferring the substrate to a substrate alignment unit by the transfer unit when the alignment state of the substrate is faulty, aligning a location of the substrate by the substrate alignment unit, and temporarily correcting the location of the substrate before the substrate is loaded on the substrate alignment unit when it is measured in the measuring of the alignment state that the alignment state of the substrate exceeds a sensor reading range.

The present invention relates to a damper control system and a damper control method for controlling an opening degree of an exhaust damper connected to an exhaust duct. The damper control system (300) includes an exhaust damper (310), a first pressure sensor (311), and a controller (315) configured to control an opening degree of the exhaust damper (310). The controller (315) is configured to switch the opening degree of the exhaust damper (310) to an opening degree smaller than a full opening on condition that a shutter (217) is opened.

A substrate processing apparatus includes: a carrier block including carrier placement parts and configured to load/unload a substrate into/from a carrier; a processing block provided on one side of the carrier block to process the substrate; first and second carrier placement parts of the carrier placement parts and provided side by side in a front-rear direction in a plan view; substrate placement parts provided to be arranged step by step vertically on one side of a substrate transfer region formed between the first and second carrier placement parts; a first substrate transfer mechanism provided in the substrate transfer region to deliver the substrate between the carrier of the first carrier placement part and a first substrate placement part of the substrate placement parts; and a second substrate transfer mechanism for moving upward and downward so as to deliver the substrate between first and second substrate placement parts.

An equipment front end module (EFEM) includes sidewalls forming an EFEM chamber configured to receive inert gas from an inert gas supply. The sidewalls include a first sidewall configured to attach to a panel first side of a panel. The panel forms a panel opening extending between the panel first side and a panel second side. The panel second side is configured to attach to a side storage pod. The EFEM further includes a robot disposed in the EFEM chamber. The robot is configured to transfer substrates from the EFEM chamber into the side storage pod via the panel opening. An exhaust conduit is coupled to the side storage pod to exhaust gas from the side storage pod to an exterior of the side storage pod.

A slide and pivot assembly for a process module bias assembly of a substrate processing system includes a slide torsion plate, one or more rails and bearings, a bias mounting plate, and a hinge assembly. The one or more rails and bearings are attached to the slide torsion plate or a processing chamber. The bias mounting plate is configured to hold a portion of a process module for processing a substrate. The hinge assembly is attached to the slide torsion plate and the bias mounting plate. The slide torsion plate, the bias mounting plate and the hinge assembly are configured to slide via the one or more rails and bearings in a lateral direction relative to the processing chamber. The bias mounting plate is configured to pivot relative to the slide torsion plate while the slide and pivot assembly is in at least a partially pulled out state.

A substrate processing apparatus includes: a group of modules including a plurality of processing modules that process a substrate and a plurality of relay modules on which the substrates are disposed to be transferred among the plurality of processing modules; a plurality of transfer mechanisms that transfer the substrates in an assigned section of a transfer path; a shared transfer mechanism shared for transfer in a first section and a second section separated from each other in the transfer path of the substrate; and a determination unit that determines a transfer destination of the substrates by the shared transfer mechanism between the first relay module and the second relay module based on a transfer status of the substrate in each section.

A heat treatment apparatus includes a heating unit, a bottom wall, a chamber and a guide unit. The heating unit is configured to support and heat a substrate onto which a processing liquid is supplied. The bottom wall surrounds the substrate supported by the heating unit. The chamber includes a top plate covering the heating unit and side walls provided between the bottom wall and the top plate. The chamber is configured to be detachably attached to a base member provided with the heating unit. The guide unit is configured to guide a movement of the chamber from an installation position, where an inner space of the chamber surrounds the substrate on the heating unit, in a predetermined driving direction along an upper surface of the heating unit.

A planarization apparatus includes a plurality of processors each configured to perform a planarization process on a substrate. Each of the processors includes a substrate chuck, and is configured to perform a planarization process on a substrate chucked by the substrate chuck. A conveyer is configured to convey a substrate chuck of a processor selected from the plurality of processors along a conveyance path including a common conveyance path shared by the plurality of processors. A supplier is arranged on a path of movement of the substrate chuck by the conveyer along the common conveyance path, and is configured to supply a composition to be used in the planarization process onto the substrate chucked by the substrate chuck.

A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.