The present invention is equipped with: a substrate (10) that has a surface upon which a drive circuit containing a TFT (20) is formed; a planarizing layer (30) that makes the surface of the substrate (10) planar by covering the drive circuit; and an organic light emitting element (40) that is provided with a first electrode (41) formed upon the surface of the planarization film and connected to the drive circuit, an organic light emitting layer (43) formed upon the first electrode, and a second electrode (44) formed upon the organic light emitting layer. In addition, the planarizing layer (30) includes a first inorganic insulating layer (31) and an organic insulating layer (32) that are layered upon the drive circuit, and the surface of the organic insulating layer (32) is formed with an arithmetic mean roughness Ra of no more than 50 nm.

A laser processing apparatus according to an embodiment includes a laser light irradiation unit and a conveying stage capable of allowing a substrate to float and convey. The conveying stage includes: a laser light irradiation region; and a substrate conveying region separated from the laser light irradiation region, a surface of the laser light irradiation region facing the substrate is configured by a first member from which a first gas is capable of jetting out to float the substrate, a surface of the substrate conveying region facing the substrate is configured by a plurality of second members from which a second gas is capable of jetting out to float the substrate, and the plurality of second members in the substrate conveying region are disposed to be separated from each other.

A display device includes a substrate; a plurality of light-emitting elements on the substrate; and a plurality of pixel circuits on the substrate, being configured to control the plurality of light-emitting elements in one-to-one correspondence. Each of the plurality of pixel circuits includes a thin film transistor. The thin film transistor includes a channel. The plurality of pixel circuits are disposed at different positions in a scanning direction of a pulse laser beam for annealing the channels. At least channels for light-emitting elements of the same color out of the channels are disposed at the same phase of irradiation cycles of the pulse laser beam in the scanning direction.

A display substrate, a method of forming the same, a display panel and a display device are provided. The display substrate includes a thin film transistor array layer, where a semiconductor material layer pattern of a driving transistor in the thin film transistor array layer includes a first channel portion, and the first channel portion includes a first sub-channel portion. and a second sub-channel portion; the semiconductor material layer pattern further includes a first conductive portion, an included angle between a straight line where a current conduction direction of the first sub-channel portion is located and a straight line Where an extending, direction of a data line in the thin film transistor array layer is located is a first included angle.

A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.

A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

The present disclosure provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a substrate, at least one first thin film transistor, and at least one second thin film transistor. A second etching barrier block is disposed between an active layer and a first source electrode, and the first drain electrode is close to the active layer, thereby shortening an effective channel of the first thin film transistor, so that a mobility of transistors and a number of pixels of a panel can be improved.

A thin film transistor 101 includes: a gate electrode 2; a gate insulating layer 3; a semiconductor layer 4 including an amorphous semiconductor layer 4a and a crystalline semiconductor layer 4c that is disposed on a portion of the amorphous semiconductor layer 4a, the semiconductor layer 4 including an active region Rc that includes the crystalline semiconductor layer 4c and a portion of the amorphous semiconductor layer 4a, and the semiconductor layer 4 including first and second semiconductor regions Rs and Rd which respectively include first and second amorphous portions A1 and A2 that are located on opposite sides of the active region Rc; a protective insulating layer 5; first and second contact layers Cs and Cd disposed on the semiconductor layer 4 and the protective insulating layer 5; a source electrode 8s; and a drain electrode 8d. The first contact layer Cs includes a first amorphous contact layer 7s that is directly in contact with the first semiconductor region Rs and a portion of a side surface of the crystalline semiconductor layer 4c. The second contact layer Cd includes a second amorphous contact layer 7d that is directly in contact with the second semiconductor region Rd and another portion of the side surface of the crystalline semiconductor layer 4c.

The present invention is equipped with: a substrate (10) that has a surface upon which a drive circuit containing a TFT (20) is formed; a planarizing layer (30) that makes the surface of the substrate (10) planar by covering the drive circuit; and an organic light emitting element (40) that is provided with a first electrode (41) formed upon the surface of the planarization film and connected to the drive circuit, an organic light emitting layer (43) formed upon the first electrode, and a second electrode (44) formed upon the organic light emitting layer. In addition, the planarizing layer (30) includes a first inorganic insulating layer (31) and an organic insulating layer (32) that are layered upon the drive circuit, and the surface of the organic insulating layer (32) is formed with an arithmetic mean roughness Ra of no more than 50 nm.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.