The current disclosure describes a new vertical tunnel field-effect transistor (TFET). The TFET includes a source layer over a substrate. A first channel layer is formed over the source layer. A drain layer is stacked over the first channel layer with a second channel layer stacked therebetween. The drain layer and the second channel layer overlap a first surface portion of the first channel layer. A gate structure is positioned over the channel layer by a second surface portion of the channel layer and contacts a sidewall of the second channel layer.

The present invention provides a method and a structure of increasing source and drain contact edge width in a two-dimensional material field effect transistor. The method includes patterning a two-dimensional material over an insulating substrate; depositing a gate dielectric over the two-dimensional material; depositing a top gate over the gate dielectric, wherein the top gate has a hard mask thereon; forming a sidewall spacer around the top gate; depositing an interlayer dielectric oxide over the sidewall spacer and the hard mask; removing the interlayer dielectric oxide adjacent to the sidewall spacer to form an open contact trench; depositing a copolymer coating in the contact trench region; annealing the copolymer to induce a directed self-assembly; performing a two-dimensional material etch over the two-dimensional material; removing the unetched copolymer without etching the gate dielectric; and etching the exposed gate in the source and the drain region to form a metal contact layer.

This invention concerns a gate structure and a process for manufacturing.

In particular, the present invention concerns the gate structuring of a field effect transistor with reduced thereto-mechanical stress and increased reliability (lower electromigration or diffusion of the gate metal).

The gate structure according to the invention comprises a substrate (10); an active layer (20) disposed on the substrate (10); an intermediate layer (40) disposed on the active layer (20), the intermediate layer (40) having a recess (45) extending through the entire intermediate layer (40) towards the active layer (20); and a contact element (50) which is arranged within the recess (45), the contact element (50) completely filling the recess (45) and extending to above the intermediate layer (40), the contact element (50) resting at least in sections directly on the intermediate layer (40); the contact element (50) being made of a Schottky metal (52) and the contact element (50) having an interior cavity (55) completely enclosed by the Schottky metal (52).

A method for fabricating a semiconductor device includes, for a substrate having a first region protected by a cap layer, forming a first device on a second region of the substrate. The substrate includes an insulator layer disposed between a first semiconductor layer and a second semiconductor layer each including a first semiconductor material. The method further includes forming a second device on the first region, including forming one or more transistors each having a channel formed from a second semiconductor material different from the first semiconductor material.

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device are disclosed. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

A semiconductor device includes a first circuit formed on a substrate in a first region, a second circuit formed on the substrate in a second region and including one or more transistors, and connections between the first circuit and respective gates of the transistors of the second circuit. The substrate includes a first semiconductor material and the second circuit includes one or more transistors having channels formed from a second semiconductor material different from the first semiconductor material.

A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

The present invention provides a method and a structure of increasing source and drain contact edge width in a two-dimensional material field effect transistor. The method includes patterning a two-dimensional material over an insulating substrate; depositing a gate dielectric over the two-dimensional material; depositing a top gate over the gate dielectric, wherein the top gate has a hard mask thereon; forming a sidewall spacer around the top gate; depositing an interlayer dielectric oxide over the sidewall spacer and the hard mask; removing the interlayer dielectric oxide adjacent to the sidewall spacer to form an open contact trench; depositing a copolymer coating in the contact trench region; annealing the copolymer to induce a directed self-assembly; performing a two-dimensional material etch over the two-dimensional material; removing the unetched copolymer without etching the gate dielectric; and etching the exposed gate in the source and the drain region to form a metal contact layer.

A method includes forming a first sacrificial layer over a substrate, and forming a sandwich structure over the first sacrificial layer. The sandwich structure includes a first isolation layer, a two-dimensional material over the first isolation layer, and a second isolation layer over the two-dimensional material. The method further includes forming a second sacrificial layer over the sandwich structure, forming a first source/drain region and a second source/drain region on opposing ends of, and contacting sidewalls of, the two-dimensional material, removing the first sacrificial layer and the second sacrificial layer to generate spaces, and forming a gate stack filling the spaces.

A III-nitride vertical field effect transistor comprises a base plate; a mask layer overlaying said base plate and having opening windows for partial exposure of said base plate; a drain grown epitaxially onto regions of said base plate exposed by the opening windows of said mask layer; an insulation layer grown epitaxially onto said drain; a source grown epitaxially onto said insulation layer; a vertical nitride stack grown epitaxially onto the side faces of said drain, said insulation layer and said source, overlaying said mask layer and providing at least one vertical conducting channel to connect said source to said drain; a current flowing from said source to said drain through a conducting channel can be modulated by an electrical voltage that is applied to the side face of said vertical nitride stack. There are preferably also electrodes and edge terms.