Patent classifications
H01L2224/06051
Antenna package and method of formation thereof
A semiconductor system includes a semiconductor chip comprising a RF circuit, a buffer layer over the RF circuit and a plurality of bumps over the buffer layer, wherein the plurality of bumps comprising at least one functional bump electrically connected to the RF circuit, and at least one dummy bump which is maintained at a distance from the RF circuit and prevented from being electrically connected to the RF circuit by the buffer layer, a conductive layer disposed over the semiconductor chip and coupled to the plurality of bumps through a plurality of vias, a feedline structure disposed over the conductive layer, wherein the feedline structure is electrically coupled to the RF circuit, and a plurality of antennas disposed over the feedline structure, wherein at least one antenna of the plurality of antennas is coupled to the RF circuit through the feedline structure.
MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES
A microelectronic device comprises a first die and a second die attached to the first die. The first die comprises a memory array region comprising a stack structure comprising vertically alternating conductive structures and insulative structures, vertically extending strings of memory cells within the stack structure, and first bond pad structures vertically neighboring the vertically extending strings of memory cells. The second die comprises a control logic region comprising control logic devices configured to effectuate at least a portion of control operations for the vertically extending string of memory cells, second bond pad structures in electrical communication with the first bond pad structures, and signal routing structures located at an interface between the first die and the second die. Related microelectronic devices, electronic systems, and methods are also described.
DISPLAY APPARATUS
A display apparatus includes a display panel configured to display an image and including a first pad part, the first pad part including a plurality of first pads disposed at a first edge thereof, and a printed circuit board having an insertion hole in which at least a portion of the first edge of the first pad part is accommodated. The printed circuit board includes a plurality of first terminals disposed on an inner surface of the insertion hole to contact the plurality of first pads.
SILICON PHOTONIC INTERPOSER WITH TWO METAL REDISTRIBUTION LAYERS
A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.
METAL BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.
SEMICONDUCTOR PACKAGE FOR IMPROVING BONDING RELIABILITY
A semiconductor package includes main pad structures and dummy pad structures between a first semiconductor chip and a second semiconductor chip. The main pad structures include first main pad structures apart from one another on the first semiconductor chip and second main pad structures placed apart from one another on the second semiconductor chip and bonded to the first main pad structures. The dummy pad structures include first dummy pad structures including first dummy pads apart from one another on the first semiconductor chip and first dummy capping layers on the first dummy pads, and second dummy pad structures including second dummy pads apart from one another on the second semiconductor chip and second dummy capping layers on the second dummy pads. The first dummy capping layers of the first dummy pad structures are not bonded to the second dummy capping layers of the second dummy pad structures.
FLOW GUIDING STRUCTURE OF CHIP
The present invention provides a flow guiding structure of chip, which comprises at least one flow guiding member disposed on a surface of a chip and adjacent to a plurality of connecting bumps disposed on the surface of the chip. When the chip is disposed on a board member, the at least one flow guiding member may guide the conductive medium on the surface of the chip to flow toward the connecting bumps and drive a plurality of conductive particles of the conductive medium to move toward the connecting bumps and thus increasing the number of the conductive particles on the surfaces of the connecting bumps. Alternatively, the flow guiding member may retard the flow of the conductive medium for avoiding the conductive particles from leaving the surfaces of the connecting bumps and thus preventing reduction of the number of the conductive particles on the surfaces of the connecting bumps.
Method and system for packing optimization of semiconductor devices
Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently.
Concentric bump design for the alignment in die stacking
An integrated circuit structure includes an alignment bump and an active electrical connector. The alignment bump includes a first non-solder metallic bump. The first non-solder metallic bump forms a ring encircling an opening therein. The active electrical connector includes a second non-solder metallic bump. A surface of the first non-solder metallic bump and a surface of the second non-solder metallic bump are substantially coplanar with each other.
SEMICONDUCTOR DEVICE
A semiconductor device includes an electronic component connected to a component pad of a wiring substrate, a connection member connected to a connection pad of the wiring substrate, and an encapsulation resin that encapsulates the electronic component and connection member. A wiring unit includes a first pad, embedded in the encapsulation resin, and a second pad, formed integrally with the first pad from the same metal. The second pad includes an external device connection surface located at a higher position than an upper surface of the encapsulation resin. A reinforcement plate includes a base, embedded in the encapsulation resin, and a heat dissipation portion, formed integrally with the base from the same metal. The first pad and the base each include a curved side surface that widens outwardly toward the upper surface of the encapsulation resin.