A method of forming a package includes providing a die, which includes a substrate having a circuit, a first passivation layer on the substrate, a plurality of pads on the first passivation layer, and a second passivation layer disposed on the first passivation layer and covering the plurality of pads. The method also includes forming one or more trenches by etching the second passivation layer that overlies a portion of the first passivation layer on the outside of the plurality of pads, and forming an organic polymer overlying the die after the one or more trenches are formed, thereby forming the package.

The leadframe substrate includes an isolator incorporated with metal leads by a compound layer. The metal leads are disposed about sidewalls of the isolator and provide horizontal and vertical routing for a semiconductor device to be assembled on the isolator. The compound layer covers the sidewalls of the isolator and fills in spaces between the metal leads, and provides robust mechanical bonds between the metal leads and the isolator.

A stacked semiconductor package includes a first semiconductor chip having a first active surface over which first bonding pads including peripheral bonding pads and central bonding pads are arranged, a first encapsulation member, two second semiconductor chips having second active surfaces over which second bonding pads are arranged at one side peripheries and disposed to be separated from each other such that the second active surfaces face the first active surface and the second bonding pads overlap with the peripheral bonding pads, first coupling members interposed between the peripheral bonding pads and the second bonding pads, a second encapsulation member formed over second side surfaces of the second semiconductor chips including a region between the second semiconductor chips, and a mold via formed through a portion of the second encapsulation member in the region between the second semiconductor chips and coupled with the central bonding pads.

A semiconductor package includes a package substrate and semiconductor chips stacked on the package substrate. The package substrate may include at least one first chip enablement finger, at least one second chip enablement finger, and a chip enablement pad selection finger. Each of the semiconductor chips includes a first chip enablement pad connected to the at least one first chip enablement finger, a second chip enablement pad connected to the at least one second chip enablement finger, and a chip enablement pad selection pad connected to the chip enablement pad selection finger. The first chip enablement pads of the semiconductor chips or the second chip enablement pads of the semiconductor chips are optionally activated by a signal applied to the chip enablement pad selection finger.

A semiconductor device is provided, including a substrate, an interconnection structure formed on the substrate, a first top conductive layer formed on the interconnection structure, bars formed on the interconnection structure, and a second top conductive layer formed above the first top conductive layer. The first top conductive layer includes several first conducting portions spaced apart from each other, and at least one of the bars is positioned between adjacent two of the first conducting portions.

According to the present invention, a semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface, a first layer formed over the first surface, a second layer thicker than the first layer formed over the first portion of the first layer, the first and second layers being formed of a same material, a first semiconductor chip mounted over a second portion of the first layer; and a second semiconductor chip commonly mounted over the first semiconductor chip and the second layer.

A package that includes a substrate, an integrated device, a plurality of first wire bonds, at least one second wire bond, and an encapsulation layer. The integrated device is coupled to the substrate. The plurality of first wire bonds is coupled to the integrated device and the substrate. The plurality of first wire bonds is configured to provide at least one electrical path between the integrated device and the substrate. The at least one second wire bond is coupled to the integrated device. The at least one second wire bond is configured to be free of an electrical connection with a circuit of the integrated device. The encapsulation layer is located over the substrate and the integrated device. The encapsulation layer encapsulates the integrated device, the plurality of first wire bonds and the at least one second wire bond.

A semiconductor device having electrodes of three or more levels, includes: a semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a transistor formed on the epitaxial layer; a source electrode formed on the epitaxial layer and electrically connected to a source of the transistor; and a gate drawing electrode formed on the epitaxial layer and electrically connected to a gate of the transistor, wherein the source electrode includes a first source electrode, a second source electrode which is an electrode at a second or higher level on the first source electrode, and a third source electrode which is an electrode at a third or higher level on the second source electrode and above the gate drawing electrode, and the gate drawing electrode is an electrode at a second or higher level on the first source electrode and surrounded with the first, second, and third source electrodes.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising a connecting surface; a third bonding pad and a fourth bonding pad on the connecting surface of the carrier; and a conductive connecting layer comprising a current conductive area between the first bonding pad and the third bonding pad and between the second bonding pad and the fourth bonding pad.

A package substrate has a sandwiched redistribution layers is disclosed. A middle redistribution layer functions as a core redistribution layer sandwiched by a top redistribution layer and a bottom redistribution layer. A top surface of the top redistribution layer is made adaptive for at least one chip to mount, and a bottom surface of the bottom redistribution layer is made adaptive for at least one chip to mount. A line width of each circuit of the middle redistribution layer is wider than a circuit of either the top redistribution layer or the bottom redistribution layer.