A transistor includes a semiconductor region provided on a substrate and three different terminal electrodes. At least one terminal electrode has an isolated electrode structure composed of a plurality of conductor patterns. A bump, which electrically connects the plurality of conductor patterns to each other, is arranged on the terminal electrode having the isolated electrode structure. A stress-relaxing layer, which is composed of a metal material containing a high-melting-point metal, is arranged between the semiconductor region of the transistor and the bump. No current path for connecting the plurality of conductor patterns to each other is arranged between the conductor patterns and the bump.

A semiconductor device is disclosed including semiconductor die formed with functionally redundant main and optional die bond pads. In examples, the optional die bond pad is configured to be optionally redundant to the main die bond pad by forming the optional die bond pad with first and second electrically isolated portions, and electrically interconnecting the main die bond pad with the first portion of the second die bond pad. The second die bond pad may or may not be made redundant to the first die bond pad depending on whether an electrically conductive material is deposited on the first and second portions of the optional die bond pad.

A circuit structure including a pad assembly, a bonding pad assembly, and a bonding assembly is provided. The pad assembly includes a first pad, a second pad, and a third pad which are separated from one another. The bonding pad assembly is located on one side of the pad assembly and includes a first bonding pad. The bonding assembly includes a first bonding wire, a second bonding wire, and a plurality of bonding members. The first bonding wire is connected to the first bonding pad and the first pad. The second bonding wire is connected to the first bonding pad and the third pad. The bonding members are connected among the first pad, the second pad, and the third pad. The circuit structure provided here may have an improved wire bonding efficiency and an increased distribution density of bonding points, and the number of bonding wires may be reduced.

An electronic system is provided, including an integrated circuit die having at least 2 bond pads, and a redistribution layer having at least one solder pad including 2 portions separated from each other and configured to provide an electrical connection between each of the 2 portions by a solder ball disposed on the solder pad, and to electrically isolate the 2 portions in an absence of the solder ball on the solder pad, and at least 2 redistribution wires, each connecting a different one of the portions to a different one of the bond pads, a second bond pad being connected via a second redistribution wire to a second portion being dedicated to die testing; and a grounded printed circuit board track, wherein the solder ball is disposed between the solder pad and the track, and neither of the redistribution wires traverses a separation space between the 2 portions.

An integrated circuit die having at least two bond pads, a redistribution layer, the redistribution layer including at least one solder pad including comprising two portions arranged to enable an electrical connection between each other by a same solder ball placed on the solder pad, but electrically isolated of each other in the absence of a solder ball on the solder pad at least two redistribution wires, each one connecting one of the two portions to one of the two bond pads, a first bond pad connected via a first redistribution wire to a first portion of the solder pad being dedicated to digital ground and a second bond pad connected via a second redistribution wire to a second portion of the solder pad being dedicated to analog ground.

A semiconductor device is provided, which includes a semiconductor die and a redistribution layer. The redistribution layer is formed on the semiconductor die, and includes a plurality of center pads, a plurality of edge pads, and a plurality of conductive wires electrically connecting the plurality of center pads to the plurality of edge pads. Each of the plurality of conductive wires comprises at least two turning points, and an inner angle at each turning point is greater than a predetermined angle.

A semiconductor device is provided, which includes a semiconductor die and a redistribution layer. The redistribution layer is formed on the semiconductor die, and includes a plurality of center pads, a plurality of edge pads, and a plurality of conductive wires electrically connecting the plurality of center pads to the plurality of edge pads. Each of the plurality of conductive wires comprises at least two turning points, and an inner angle at each turning point is greater than a predetermined angle.

The invention relates to an electronic system comprising: an integrated circuit die having: at least 2 bond pads a redistribution layer, said redistribution layer having: at least a solder pad comprising 2 portions arranged to enable an electrical connection between each other by a same solder ball placed on said solder pad, but electrically isolated of each other in the absence of a solder ball on the solder pad at least 2 redistribution wires, each one connecting one of the 2 portions to one of the 2 bond pads,
a second bond pad connected via a second redistribution wire to a second portion of the solder pad being dedicated to testing said integrated circuit die a grounded printed circuit board track, a solder ball being placed between the solder pad and the printed circuit board track.

An integrated circuit die having at least two bond pads, a redistribution layer, the redistribution layer including at least one solder pad including comprising two portions arranged to enable an electrical connection between each other by a same solder ball placed on the solder pad, but electrically isolated of each other in the absence of a solder ball on the solder pad at least two redistribution wires, each one connecting one of the two portions to one of the two bond pads, a first bond pad connected via a first redistribution wire to a first portion of the solder pad being dedicated to digital ground and a second bond pad connected via a second redistribution wire to a second portion of the solder pad being dedicated to analog ground.

A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.