An integrated circuit chip is bonded to a support. The chip includes a first connection pad and two second connection pads. The support includes a third connection pad and two fourth connection pads. A stack layers includes first, second, and third conductive layers and insulating layers. The first, second, and third conductive layers are separated from one another by the insulating layers. The second conductive layer is positioned between the first and third conductive layers. The first and third conductive layers electrically connect the two second connection pads to the two fourth connection pads. The second conductive layer electrically connects the first connection pad to the third connection pad.

Described examples include a device including a semiconductor die having a first surface with bond pads and an opposite second surface attached to a substrate by an adhesive layer covering at least a portion of the surface area of the second surface. The adhesive layer includes first zones composed of a first polymeric compound and adding up to a first portion of the surface area, and second zones composed of a second polymeric compound and adding up to a second portion of the surface area, the first zones and the second zones being contiguous. The first polymeric compound has a first modulus and the second polymeric compound has a second modulus greater than the first modulus.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can reduce an outgas at the time of being exposed to high temperatures, and can enhance moisture-resistant reliability. An inkjet adhesive according to the present invention comprises a first photocurable compound having one (meth)acrylol group, a second photocurable compound having two or more (meth)acrylol groups, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the first photocurable compound contains alkyl (meth)acrylate having 8 to 21 carbon atoms.

In various embodiments this disclosure is directed to conductive adhesives layers that can be used, in one example embodiment, to connect one or more shielding structures (for example, metal cans and/or covers) to a semiconductor package to enclose one or more electronic components on the semiconductor package. In another embodiment, the conductive adhesive layers disclosed herein can be used in connection with optoelectronic devices (for example, optoelectronic devices including laser diodes and/or avalanche photodiodes, APDs). In one embodiment, the conductive adhesives can additionally be used for thermal dissipation and for electrical contact in connection with one or more electronic components on a semiconductor package. In one embodiment, various materials including, spray prints, conductive paste, inks (for example, sintering silver-based materials), epoxy material (for example, epoxy materials filled with silver and/or other metal particles) can be used to provide a conductive adhesive layer.

A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Provided is a flip chip mounting apparatus for mounting chips (400) to a substrate (200), and the apparatus includes at least one sectionalized mounting stage (45) divided into a heating section (452) and a non-heating section (456), the heating section being for heating a substrate (200) fixed to a front surface of the heating section, the non-heating section not heating the substrate (200) suctioned to a front surface of the non-heating section. With this, it is possible to provide an electronic-component mounting apparatus that is simple and capable of efficiently mounting a large number of electronic components.

An integrated circuit (IC) package, assembly tool and method for assembling an IC package are described herein. In a first example, an IC package is provided that includes a package substrate, at least a first integrated circuit (IC) die and a cover. The first integrated circuit (IC) die is mechanically and electrically coupled to the package substrate via solder connections. The cover is bonded to the package substrate. The cover encloses the first IC die and is laterally offset from a peripheral edge of the package substrate.

A method for bonding a first substrate with a second substrate by means of a connecting layer that is arranged between the substrates and that is comprised of a connecting material with the following steps: applying the connecting material to the first substrate and/or the second substrate in liquid form, and distributing the connecting material between the substrates by bringing the substrates closer and as a result forming the shape of the connecting layer with a thickness t.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.