A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A device is disclosed. The device includes a first die, a plurality of chiplets above the first die, a first underfill material beneath the chiplets, and a gap fill material between the chiplets. The gap fill material is different from the first underfill material. An interface region is formed between the first underfill material and the gap fill material.

A device is disclosed. The device includes a first die, a plurality of chiplets above the first die, a first underfill material beneath the chiplets, and a gap fill material between the chiplets. The gap fill material is different from the first underfill material. An interface region is formed between the first underfill material and the gap fill material.

A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.

A conductive film includes an elongated release film and a plurality of conductive adhesive film pieces provided on the release film. Then, the plurality of adhesive film pieces are arranged in a longitudinal direction X of the release film. For this reason, the adhesive film piece can be set to an arbitrary shape. Accordingly, it is possible to attach the adhesive film piece to adhesive surfaces having various shapes and to efficiently use the adhesive film piece.

A chip arranging method for arranging a plurality of chips on a wafer includes a groove forming step of forming a plurality of intersecting grooves that mark off each of chip placement regions on the front surface side of the wafer, a liquid supplying step of supplying a liquid to the chip placement regions, a chip placing step of placing the chips on the liquid to position the chips in the chip placement regions by the surface tension of the liquid after carrying out the liquid supplying step, and a liquid removing step of removing the liquid to arrange the plurality of chips on the wafer after carrying out the chip placing step.

A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.

A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.

A first insulating film is applied onto a joining face of a semiconductor device including a connection terminal on a joining face, and the connection terminal is embedded inside the first insulating film. The second insulating film is formed on a joining target face of a joining target, which includes a connection target terminal on the joining target face, and the connection target terminal is embedded inside the second insulating film. The semiconductor device and the joining target are joined together by applying pressure and causing the semiconductor device and the joining target to make contact with each other.