A silicon carbide semiconductor device including a semiconductor substrate containing silicon carbide, a contact electrode, which is a silicide layer containing nickel, provided on a surface of the semiconductor substrate and forming an ohmic contact with the semiconductor substrate, and a metal connection layer provided on a surface of the contact electrode. The metal connection layer has a stacked structure in which on the surface of the contact electrode, a titanium layer, a nickel layer, and a gold layer are sequentially stacked. The titanium layer includes a carbon diffusion layer formed along an interface between the titanium layer and the contact electrode, a concentration of carbon being higher in the carbon diffusion layer than in a portion of the titanium layer other than the carbon diffusion layer. The titanium layer, the nickel layer and the gold layer have thicknesses of 100 nm to 300 nm, 1000 nm to 1500 nm, and 20 nm to 200 nm, respectively.

A semiconductor package structure is provided. The semiconductor package structure includes a chip structure. The semiconductor package structure includes a first conductive structure over the chip structure. The first conductive structure is electrically connected to the chip structure. The first conductive structure includes a first transition layer over the chip structure; a first conductive layer on the first transition layer; and a second conductive layer over the first conductive layer. The first conductive layer is substantially made of twinned copper. A first average roughness of a first top surface of the second conductive layer is less than a second average roughness of a second top surface of the first conductive layer.

In a method for connecting components during production of power electronics modules or assemblies, surfaces of the components have a metallic surface layer upon supply, or are furnished therewith, wherein the layer has a surface that is smooth enough to allow direct bonding or is smoothed to obtain a surface that is smooth enough to allow direct bonding. The surface layers of the surfaces that are to be connected are then pressed against each other with a pressure of at least 5 MPa at elevated temperature, so that they are joined to each other, forming a single layer. The method enables simple, rapid connection of even relatively large contact surfaces, which satisfies the high requirements of power electronics modules.

A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

A light-emitting device includes a first light-emitting element, a second light-emitting element having a peak emission wavelength different from that of the first light-emitting element, a light-guide member covering a light extracting surface and lateral surfaces of the first light-emitting element and a light extracting surface and lateral surfaces of the second light-emitting element, and a wavelength conversion layer continuously covering the light extracting surface of each of the first and second light-emitting elements and disposed apart from each of the first and second light-emitting elements, and a first reflective member covering outer lateral surfaces of the light-guide member. An angle defined by an active layer of the first light-emitting element and an active layer of the second light-emitting element is less than 180° at a wavelength conversion layer side.

A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

A package that includes a substrate having a first surface; a solder resist layer coupled to the first surface of the substrate; a device located over the solder resist layer such that a portion of the device touches the solder resist layer; and an encapsulation layer located over the solder resist layer such that the encapsulation layer encapsulates the device. The solder resist layer is configured as a seating plane for the device. The device is located over the solder resist layer such that a surface of the device facing the substrate is approximately parallel to the first surface of the substrate. The solder resist layer includes at least one notch. The device is located over the solder resist layer such that at least one corner of the device touches the at least one notch.

Representative implementations of techniques and methods include chemical mechanical polishing for hybrid bonding. The disclosed methods include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. Additionally, the conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

Methods for hybrid bonding include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. The conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

A semiconductor package includes a package substrate, where a plurality of bonding pads are arranged on an upper surface of the package substrate; a semiconductor chip mounted on the upper surface of the package substrate, where a plurality of chip pads are arranged on an upper surface of the semiconductor chip; a first adhesive film attached to a lower surface of the semiconductor chip, wherein the first adhesive film having a first area corresponding to an area of the semiconductor chip; a second adhesive film attached to the upper surface of the package substrate, where the second adhesive film is joined to the first adhesive film, and the second adhesive film has a second area larger than the first area; a plurality of bonding wires; and a molding portion disposed on the upper surface of the package substrate.