A radar device includes: a substrate including multiple high-frequency conductor layers arranged on a front surface; a semiconductor component in contact with the high-frequency conductor layers via conductive members; and an adhesive that bonds the semiconductor component to the front surface of the substrate. The semiconductor component has a bottom surface and a first side surface facing in a first direction. All the multiple high-frequency conductor layers include at least high-frequency conductor layers bending in a plane of the front surface and thereby extend, on the front surface, from inside ends facing the bottom surface to outside ends positioned in the first direction from the first side surface. The adhesive is in contact with the front surface except for the sites of the multiple high-frequency conductor layers formed and in contact with the side surfaces of the semiconductor component.

A semiconductor package includes a base chip and at least one semiconductor chip disposed on the base chip. An adhesive film is disposed between the base chip and the at least one semiconductor chip and is configured to fix the at least one semiconductor chip on the base chip. The adhesive film includes an inner film portion that overlaps the at least one semiconductor chip in a thickness direction of the base chip, and an outer film portion that does not overlap the at least one semiconductor chip in the thickness direction of the base chip. A width of the outer film portion in a direction perpendicular to a lateral edge of the at least one semiconductor chip is substantially uniform within a deviation range of 20% of an average width of the outer film portion.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A package structure and method of forming the same are provided. The package structure includes a die, a first dielectric layer, a second dielectric layer and a conductive terminal. The first dielectric layer covers a bottom surface of the die and includes a first edge portion and a first center portion in contact with the bottom surface of the die. The first edge portion is thicker than the first center portion. The second dielectric layer is disposed on the first dielectric layer and laterally surrounding the die. The second dielectric layer includes a second edge portion on the first edge portion and a second center portion in contact with a sidewall of the die. The second edge portion is thinner than the second center portion. The conductive terminal is disposed over the die and the second dielectric layer and electrically connected to the die.

An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

Provided is a package structure including a bottom die, a top die, an insulating layer, a circuit substrate, a dam structure, and an underfill. The top die is bonded on a front side of the bottom die. The insulating layer is disposed on the front side of the bottom die to laterally encapsulate a sidewall of the top die. The circuit substrate is bonded on a back side of the bottom die through a plurality of connectors. The dam structure is disposed between the circuit substrate and the back side of the bottom die, and connected to the back side of the bottom die. The underfill laterally encapsulates the connectors and the dam structure. The dam structure is electrically isolated from the circuit substrate by the underfill. A method of forming the package structure is also provided.

Provided is a package structure including a bottom die, a top die, an insulating layer, a circuit substrate, a dam structure, and an underfill. The top die is bonded on a front side of the bottom die. The insulating layer is disposed on the front side of the bottom die to laterally encapsulate a sidewall of the top die. The circuit substrate is bonded on a back side of the bottom die through a plurality of connectors. The dam structure is disposed between the circuit substrate and the back side of the bottom die, and connected to the back side of the bottom die. The underfill laterally encapsulates the connectors and the dam structure. The dam structure is electrically isolated from the circuit substrate by the underfill. A method of forming the package structure is also provided.

An electronic assembly and methods of making the assembly are disclosed. The electronic assembly includes a substrate with an elastic member having an intrinsic stress profile. The elastic member has an anchor portion on the surface of the substrate; and a free end biased away from the substrate via the intrinsic stress profile to form an out of plane structure. The substrate includes one or more spacers on the substrate. The electronic assembly includes a chip comprising contact pads. The out of plane structure on the substrate touches corresponding contact pads on the chip, and the spacers on the substrate touch the chip forming a gap between the substrate and the chip.

An integrated circuit structure may be formed having a first integrated circuit device, a second integrated circuit device electrically coupled to the first integrated circuit device with a plurality of device-to-device interconnects, and at least one jumping drops vapor chamber between the first integrated circuit device and the second integrated circuit device wherein at least one device-to-device interconnect of the plurality of device-to-device interconnects extends through the jumping drops vapor chamber. In one embodiment, the integrated circuit structure may include three or more integrated circuit devices with at least two jumping drops vapor chambers disposed between the three or more integrated circuit devices. In a further embodiment, the two jumping drops chambers may be in fluid communication with one another.