A die transfer method and a die transfer system thereof are disclosed. The die transfer method includes the following steps: providing a wafer to generate a plurality of dies; transferring a plurality of dies to a surface of a substrate to fix the plurality of dies on the surface of the substrate; aligning the substrate with a target substrate, wherein the target substrate has a landing site and the position of at least one die corresponds to the position of the landing site; in an air environment or a liquid environment, executing lyophilic or lyophobic treatment as compared to the periphery respectively to a bonding surface between the at least one die and the landing site of the target substrate; transferring the at least one die onto the landing site of the target substrate; and fixing the at least one die at the landing site.

A semiconductor package includes a substrate having a top surface on which a semiconductor chip is mounted and a bottom surface opposite the top surface, an upper metal pattern including an upper connection region to which an external electrical device is connected and a chip connection region to which the semiconductor chip is connected, a lower metal pattern including a lower connection region to which other external electrical device is connected, and an intermediate metal pattern electrically connecting the upper and lower metal patterns. The upper metal pattern provides at least three groups of inner leads. The lower metal pattern provides at least three groups of outer leads. A module, such as that of a display device, may include the semiconductor package.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

A method includes forming one or more vias in a substrate, forming a first photoresist layer on a top surface of the substrate and a second photoresist layer on a bottom surface of the substrate, patterning the first photoresist layer and the second photoresist layer to remove at least a first portion of the first photoresist layer and at least a second portion of the second photoresist layer, filling the one or more vias, the first portion and the second portion with solder material using injection molded soldering, and removing remaining portions of the first photoresist layer and the second photoresist layer.

A package structure is disclosed. The package structure includes a first substrate, a second substrate, a gap, and a directing structure. The second substrate is disposed under the first substrate. The gap is between the first substrate and the second substrate. The gap includes a first region and a second region. The first region is configured to accommodate a filling material. The directing structure is disposed in a flow path of the filling material and configured to reduce a migration of the filling material from the first region to the second region.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A semiconductor package includes a substrate having a top surface on which a semiconductor chip is mounted and a bottom surface opposite the top surface, an upper metal pattern including an upper connection region to which an external electrical device is connected and a chip connection region to which the semiconductor chip is connected, a lower metal pattern including a lower connection region to which other external electrical device is connected, and an intermediate metal pattern electrically connecting the upper and lower metal patterns. The upper metal pattern provides at least three groups of inner leads. The lower metal pattern provides at least three groups of outer leads. A module, such as that of a display device, may include the semiconductor package.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.