A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

In a light emitting device, in a bottom surface of a cavity of a Si substrate, slit-shaped through holes and through electrodes that fill the through holes are provided at a position facing a first element electrode of a light emitting element. A length of an upper surface of the through electrode in a long axis direction is larger than a height of the through electrode in a thickness direction of the Si substrate. A joining layer having a shape corresponding to a shape of the upper surface of the through electrode is disposed between the first element electrode of the light emitting element and the upper surface of the through electrode facing the first element electrode. The entire upper surface of the through electrode is joined to the first element electrode via the joining layer.

A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

Provided is a semiconductor package including a first redistribution layer, a semiconductor device on the first redistribution layer, a substrate protection layer below the first redistribution layer, a groove in a bottom surface of the substrate protection layer, a passive device in the groove, an underfill between the passive device and the groove, and a dam apart from the passive device, the dam protruding from the substrate protection layer and at least partially surrounding the passive device.

A method of forming a die-in-die semiconductor device is provided. The method includes forming a first cavity in a backside of a first semiconductor die. The first semiconductor die has a back end of line (BEOL) region, a front end of line (FEOL) region, and a bulk region. A second semiconductor die is mounted in the first cavity. A bond pad of the second semiconductor die is interconnected through a bottom side of the first cavity with an embedded conductive trace of the BEOL region of the first semiconductor die.

An optical semiconductor device according to an embodiment includes: a first semiconductor element having a first bonding surface and an end surface which crosses the first bonding surface and from which an optical signal is emitted; and a second semiconductor element having a second bonding surface facing the first bonding surface and an optical waveguide which extends in a direction parallel to the second bonding surface and through which the optical signal is transmitted. The first bonding surface and the second bonding surface are bonded to each other in a hydrophilic manner, and the end surface of the first semiconductor element and the optical waveguide of the second semiconductor element are optically coupled to each other.

The present application belongs to the field of packaging technology, and particularly relates to a packaging structure for an RF front-end module. Through the interaction of the support structure and the first adhesive part arranged on the substrate, a cavity structure is formed between the first filter chip and the first surface of the substrate. Moreover, the first adhesive part does not require excessive area coverage, allowing for material savings. This design ensures the formation of a cavity between the filter chip and the substrate while maintaining cost efficiency, and it also improves the reliability of the packaging structure of an RF front-end module.

A semiconductor package includes a first redistribution layer (RDL) including a first redistribution wiring structure, an insulation layer contacting a lower surface of the first RDL, the insulation layer including an opening exposing a lower surface of a portion of the first redistribution wiring structure, a pad in the opening, the pad contacting the lower surface of the portion of the first redistribution wiring structure and including solder, a second semiconductor chip contacting a lower surface of the pad, and an underfill member in the opening. The underfill member does not contact a lower surface of a portion of a lower surface of the insulation layer adjacent to the opening, and the underfill member at least partially at least partially overlaps sidewalls of the pad and the second semiconductor chip in the first direction.