Aspects disclosed in the detailed description include an integrated circuit (IC) package employing a metal block with metal interconnects thermally coupling a semiconductor die (die) to an interposer substrate for dissipating thermal energy in the die. The die is coupled to a package substrate to provide signal routing paths to the die. To facilitate additional dies being stacked in the IC package as a three-dimensional (3D) IC (3DIC) package, the IC package also includes an interposer substrate adjacent to the die. The interposer substrate supports providing additional signal routing paths to the package substrate. The interposer substrate also includes a metal block which comprises a plurality of metal layers and is thermally coupled to the die and a metal interconnect(s) in the interposer substrate to dissipate thermal energy from the die through the metal block and through the coupled metal interconnect(s).

A wireless transistor outline (TO) package structure includes a carrying module, a chip and a lead frame both mounted on the carrying module, a sheet-like bonding module mounted on the chip and the lead frame in a flip chip manner, and an encapsulant that covers the above components therein. A connection pad of the chip and a connection segment of the lead frame are coplanar with each other. The sheet-like bonding module includes a ceramic substrate and a plurality of circuit layers that are stacked and formed on the ceramic substrate in a direct plated copper (DPC) manner. Areas of the circuit layers gradually decrease in a direction away from the ceramic substrate, and thicknesses of the circuit layers gradually increase in the same direction. The circuit layer arranged away from the ceramic substrate connects the connection pad and the connection segment for establishing an electrical connection therebetween.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A first bonding member is located between a first electrode of a second chip and a second electrode of a first chip in a first direction and between a first electrode of the second chip and a protective film of the first chip in the first direction. The first bonding member electrically connects the second electrode of the first chip and the first electrode of the second chip in an opening of the protective film of the first chip. The protective film of the first chip includes a first recess in a surface of the protective film of the first chip facing the first electrode of the second chip. A portion of the first bonding member is located in the first recess.

A semiconductor device including: a die paddle having an upper surface; a solder layer disposed on the upper surface of the die paddle; and a die disposed on the solder layer, so that the solder layer is between the die paddle and the die; the solder layer includes a plurality of spacers configured to be, during production of the semiconductor device prior to hardening of the solder layer, movable in relation to the die paddle; and the die paddle includes a plurality of recesses in the upper surface of the die paddle, and the plurality of recesses is configured to receive the plurality of spacers, so that the plurality of spacers is embedded within the plurality of recesses.

A semiconductor package is provided. The semiconductor package includes a substrate including a first wiring structure, a first surface and a second surface, an interposer on the second surface, a scribe lane region, and a chip region defined by the scribe lane region, and a third surface and a fourth surface, a first semiconductor chip on the fourth surface, and a mold layer on the fourth surface, and on at least a part of a side surface of the first semiconductor chip. The third surface is closer to the substrate than the fourth surface, the third surface includes a first sub-surface corresponding to the scribe lane region and a second sub-surface corresponding to the chip region, and a distance in the first direction from the second surface to the second sub-surface is less than a distance in the first direction from the second surface to the first sub-surface.

A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.