The present invention relates to a conductive paste for bonding comprising 100 parts by weight of the metal powder, 5 to 20 parts by weight of a solvent, and 0.05 to 3 parts by weight of a polymer, wherein the polymer comprises a first polymer and a second polymer, wherein the molecular weight (Mw) of the first polymer is 5,000 to 95,000, and the molecular weight (Mw) of the second polymer is 100,000 to 300,000.

A semiconductor package includes a dielectric layer and a conductive post. The dielectric layer has a first surface and a second surface opposite to the first surface. The conductive post is disposed in the dielectric layer. The conductive post includes a first portion and a second portion disposed above the first portion. The second portion of the conductive post is recessed from the second surface of the dielectric layer.

A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.

A semiconductor package includes a dielectric layer and a conductive post. The dielectric layer has a first surface and a second surface opposite to the first surface. The conductive post is disposed in the dielectric layer. The conductive post includes a first portion and a second portion disposed above the first portion. The second portion of the conductive post is recessed from the second surface of the dielectric layer.

A power module includes a first metal layer-clad substrate and a second metal layer-clad substrate that are disposed opposite to each other, and a chip and an interconnection pillar that are located between the first metal layer-clad substrate and the second metal layer-clad substrate. The chip and the first metal layer-clad substrate are electrically connected through press sintering by using a sintering material to improve bonding reliability. The chip is electrically connected to the second metal layer-clad substrate by using the interconnection pillar.

Three-dimensional (3-D) integrated circuit (IC) structures that are less constrained by the 2-D footprint of a conventional IC die. The novel 3-D IC structures combine 3-D ICs fabricated using various die and/or wafer bonding technologies with embedded die packaging technology. Embodiments include a 3-D IC structure including one or more 3-D IC dies embedded within a stack of one or more planar lamination layers. Combining one or more 3-D ICs with embedded die packaging technology results in a high degree of integration and miniaturization by taking advantage of electrical connection pad placement on both top and bottom surfaces of the 3-D ICs, enables better integration of active components as well as passive components, enables flexible partitioning of circuits and systems for 3-D integration, and enables low-profile 3-D IC structures that take advantage of economies of scale.

A power module assembly has a first substrate including a first layer, second layer and a third layer. The first layer is configured to carry a switch current flowing in a first direction. A second substrate is operatively connected to the first substrate and includes a fourth layer, fifth layer and a sixth layer. A conductive joining layer connects the third layer of the first substrate and the fourth layer of the second substrate. The conductive joining layer may be a first sintered layer. The third layer of the first substrate, the first sintered layer and the fourth layer of the second substrate are configured to function together as a unitary conducting layer carrying the switch current in a second direction substantially opposite to the first direction. The net inductance is reduced by a cancellation effect of the switch current going in opposite directions.

A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.

A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.

A power module assembly has a first substrate including a first layer, second layer and a third layer. The first layer is configured to carry a switch current flowing in a first direction. A second substrate is operatively connected to the first substrate and includes a fourth layer, fifth layer and a sixth layer. A conductive joining layer connects the third layer of the first substrate and the fourth layer of the second substrate. The conductive joining layer may be a first sintered layer. The third layer of the first substrate, the first sintered layer and the fourth layer of the second substrate are configured to function together as a unitary conducting layer carrying the switch current in a second direction substantially opposite to the first direction. The net inductance is reduced by a cancellation effect of the switch current going in opposite directions.