A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

An electronic package structure is provided. The electronic packaging structure includes a substrate, a conductive layer disposed on the substrate, an intermetallic compound disposed on the conductive layer, a stress buffering material disposed on the substrate and adjacent to the conductive layer, and an electronic device disposed on the conductive layer and the stress buffering material. The intermetallic compound is disposed between the electronic device and the conductive layer, between the electronic device and the stress buffering material, between the substrate and the stress buffering material, and between the conductive layer and the stress buffering material. A maximum thickness of the intermetallic compound disposed between the electronic device and the stress buffering material, between the substrate and the stress buffering material, and between the conductive layer and the stress buffering material is greater than the thickness of the intermetallic compound disposed between the electronic device and the conductive layer.

A filler-containing film that holds fillers and a fine solid in an insulating resin layer and a predetermined arrangement of the fillers is repeated as viewed in a plan view has a proportion of 300% or less where the proportion is a repeat pitch of the fillers after thermocompression bonding to that before thermocompression bonding during thermocompression bonding under a predetermined thermocompression bonding condition with the filler-containing film held between smooth surfaces. A method of producing the filler-containing film includes the steps of: forming an insulating resin layer on a release substrate; pushing fillers from a surface on a side opposite to the release substrate of the insulating resin layer; and layering the insulating resin layer containing the fillers pushed and another insulating resin layer. This filler-containing film suppresses disorder of arrangement of fillers during thermocompression bonding of the film to an article.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

A semiconductor device includes a conductive can include a flat portion and at least one peripheral rim portion extending from an edge of the flat portion, a semiconductor die comprising a first main face and a second main face opposite to the first main face, a first contact pad disposed on the first main face and a second contact pad disposed on the second main face, wherein the first contact pad is electrically connected to the flat portion of the can, an electrical interconnector connected with the second contact pad, and an encapsulant disposed under the semiconductor die so as to surround the electrical interconnector, wherein an external surface of the electrical interconnector is recessed from an external surface of the encapsulant.

The method for fabricating a device includes the following successive steps: providing a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad, and providing a second substrate; fixing the first substrate with the second substrate, the at least one metal pad forming a blocking means preventing movement beyond a threshold position; and performing an anneal of the metal pad so as to melt the metal pad and eliminate the blocking means.