A method for manufacturing a display device can include growing a plurality of light emitting (LEDs) on a growing substrate; forming a member having a thermal flow characteristic on at least one side surface of each of the plurality of LEDs; separating each of the plurality of LEDs from the growing substrate; forming a plurality of assembly grooves in a wiring substrate for defining pixel regions; assembling the plurality of LEDs at locations respectively corresponding to the plurality of assembly grooves; and applying heat to the wiring substrate to perform a reflow process for adjusting a position of at least one of the plurality of LEDs.

A spectroscopic sensor includes a wiring substrate having a main surface, a light detector disposed on the main surface of the wiring substrate, a Fabry-Perot interference filter, a spacer which is provided on the main surface of the wiring substrate and supports the Fabry-Perot interference filter so that the Fabry-Perot interference filter and the light detector are separated from each other, and a stein connected to a ground potential. A second current path which has a smaller electric resistance than that of an arbitrary first current path which extends from the Fabry-Perot interference filter to the light detector via the spacer and the wiring substrate is formed between the Fabry-Perot interference filter and the stein.

A method of fabricating a semiconductor device is provided, including providing a base substrate and a die stacking unit mounted on the base substrate. Conductive joints are connected between two adjacent dies of the die stacking unit. The method further includes providing dummy micro bumps and dummy pads between the two adjacent dies and between the conductive joints. The dummy micro bumps and the dummy pads are connected to one of the two adjacent dies but not to the other, and the dummy micro bumps are formed on some of the dummy pads but not on all of the dummy pads. In addition, the method includes filling the gaps between the base substrate, all dies of the die stacking unit, the conductive joints, the dummy micro bumps, and the dummy pads with an underfill material by capillary attraction.

The invention refers to a method for assembling at least one lighting element onto a substrate, the method comprising: pre-assembling at least one lighting element onto a temporary carrier; pre-assembling at least one reference element onto the temporary carrier; aligning the pre-assembled temporary carrier onto the substrate based, at least in part, on the at least one reference element of the temporary carrier; and mounting the at least one lighting element onto the substrate. The invention further relates to substrate comprising: at least one lighting element, wherein the at least one lighting element is assembled onto the substrate, in particular by a method according to the first aspect of the present invention, and to a use of a method for assembling at least one lighting element onto a substrate.

A power module according implementations of the present disclosure includes a bonding layer for bonding two adjacent members. The bonding layer is formed by melting, applying, and solidifying a bonding material that has excellent thermal conductivity and electrical conductivity. The melted bonding material includes a plurality of anti-tilting members. The two members bonded during the process of solidifying the melted bonding material are supported by the plurality of anti-tilting members. This may allow tilting caused during the formation of the bonding layer to be suppressed.

Disclosed is a semiconductor package comprising a first semiconductor chip on a substrate, a second semiconductor chip between the substrate and the first semiconductor chip, and a spacer between the substrate and the first semiconductor chip. The substrate includes a first substrate pad between the second semiconductor chip and the spacer. The second semiconductor chip includes a chip pad and a signal wire. The spacer includes a first dummy pad on the spacer and a first dummy wire coupled to the first dummy pad. The first dummy pad is adjacent to the second semiconductor chip. The first semiconductor chip is attached to the second semiconductor chip and the spacer by an adhesive layer on the first semiconductor chip. A portion of each of the signal wire and the first dummy wire are in the adhesive layer.

Processes for adjusting dimensions of dielectric bond line materials in stacks of microelectronic components to prevent extrusion of the dielectric bond line materials beyond component peripheries during thermocompression bonding by patterning the materials with boundary portions inset from component peripheries, or employing an inset dielectric material surrounded by another solidified dielectric material. Related material films, articles and assemblies are also disclosed.

A semiconductor device includes: a substrate; a semiconductor chip disposed adjacent to a front surface of the semiconductor substrate; an adhesive fixing a back surface of the semiconductor chip to the front surface of the substrate; and a plurality of spacers disposed to regulate a distance between the substrate and the semiconductor chip. The spacers are bonded to the front surface of the substrate or the back surface of the semiconductor chip, and are located on respective vertexes of a polygon surrounding a center of gravity of the semiconductor chip.

A multi-sided cooling semiconductor package includes a first substrate, a second substrate, semiconductor chips disposed between the first substrate and the second substrate, and first metal preforms. The first substrate includes a upper metal layer, a lower metal layer, and a dielectric plate between the upper metal layer and the lower metal layer. The second substrate also includes a upper metal layer, a lower metal layer, and a dielectric plate between the upper metal layer and the lower metal layer. The first metal preforms are disposed between the first substrate and the semiconductor chips and between the second substrate and the semiconductor chips. A first part of the first metal preforms is in direct contact with the upper metal layer of the first substrate, and a second part of the first metal preforms is in direct contact with the lower metal layer of the second substrate.

A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.