A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the t least one side surface. The first adhesive layer and the first resin layer contact each other.

A manufacturing method of a semiconductor package includes disposing one or more semiconductor devices on a base substrate, each of the one or more semiconductor devices having an external terminal; forming a frame on the base substrate, the frame surrounding the one or more semiconductor devices; and forming a resin insulating layer inside the frame, the resin insulating layer sealing the one or more semiconductor devices and the resin insulating layer including a resin insulating material; wherein a surface of each of the one or more semiconductor devices on which the external terminal is not provided faces the base substrate.

A display device is disclosed. The display device includes a substrate having a plurality of pixels, wherein each of the plurality of pixels includes at least one light emitting chip, and a structure on one side of at least one of the plurality of pixels. A base material of the light emitting chip is the same as a base material of the structure.

A semiconductor device may be provided with: a semiconductor chip; an encapsulant encapsulating the semiconductor chip therein; and a conductor member joined to the semiconductor chip via a solder layer within the encapsulant. The conductor member may comprise a joint surface in contact with the solder layer and a side surface extending from a peripheral edge of the joint surface. The side surface may comprise an unroughened area and a roughened area that is greater in surface roughness than the unroughened area. The unroughened area may be located adjacent to the peripheral edge of the joint surface.

A display device is disclosed. The display device includes a substrate having a plurality of pixels, wherein each of the plurality of pixels includes at least one light emitting chip, and a structure on one side of at least one of the plurality of pixels. A base material of the light emitting chip is the same as a base material of the structure.

A printed circuit board assembly of an implantable medical device comprises a printed circuit board and a sensor device that is arranged at the printed circuit board and joined to the printed circuit board by way of an adhesive layer. It is provided in the process that the adhesive layer is formed of an adhesive compound in which glass spheres are embedded. In this way, a printed circuit board assembly is provided which, in a simple, inexpensive manner, allows a sensor device to be joined to a printed circuit board for installation in a medical device, with advantageous mechanical decoupling and improved process reliability.

A power module according implementations of the present disclosure includes a bonding layer for bonding two adjacent members. The bonding layer is formed by melting, applying, and solidifying a bonding material that has excellent thermal conductivity and electrical conductivity. The melted bonding material includes a plurality of anti-tilting members. The two members bonded during the process of solidifying the melted bonding material are supported by the plurality of anti-tilting members. This may allow tilting caused during the formation of the bonding layer to be suppressed.

A method includes disposing a semiconductor die between a first high voltage isolation carrier and a second high voltage isolation carrier, disposing a first molding material in a space between the semiconductor die and the first high voltage isolation carrier, and disposing a conductive spacer between the semiconductor die and the second high voltage isolation carrier. The method further includes encapsulating the first molding material and the conductive spacer with a second molding material.

A method includes disposing a semiconductor die between a first high voltage isolation carrier and a second high voltage isolation carrier, disposing a first molding material in a space between the semiconductor die and the first high voltage isolation carrier, and disposing a conductive spacer between the semiconductor die and the second high voltage isolation carrier. The method further includes encapsulating the first molding material and the conductive spacer with a second molding material.

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the t least one side surface. The first adhesive layer and the first resin layer contact each other.