A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

A method includes followings operations. A substrate including a first surface and a second surface is provided. The substrate and a transparent film are heated to attach the transparent film on the first surface. A first coefficient of a thermal expansion (CTE) mismatch is between the substrate and the transparent film. The substrate and the transparent film are cooled. A polymeric material is disposed on the second surface. A second CTE mismatch is between the substrate and the polymeric material. The second CTE mismatch is counteracted by the first CTE mismatch.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to secure the wafer tape and a support frame configured to secure a support substrate. The support substrate includes a plurality of holes and secures the product substrate. The apparatus further includes an actuator to transfer the semiconductor die to a transfer location on the product substrate.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate

Various embodiments of an integrated circuit module and a method of forming such module are disclosed. The module includes a first die having an active substrate, an integrated circuit disposed on a first major surface of the active substrate, and a cavity disposed in a second major surface of the active substrate. The module also includes a second die having a first major surface, a second major surface, and a conductive pad disposed on the second major surface. The second die is disposed at least partially within the cavity of the first die such that the first major surface of the second die faces the cavity of the first die.

Various embodiments of an integrated circuit module and a method of forming such module are disclosed. The module includes a first die having an active substrate, an integrated circuit disposed on a first major surface of the active substrate, and a cavity disposed in a second major surface of the active substrate. The module also includes a second die having a first major surface, a second major surface, and a conductive pad disposed on the second major surface. The second die is disposed at least partially within the cavity of the first die such that the first major surface of the second die faces the cavity of the first die.